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Datasheet: NE681M13-A (California Eastern Labs)

Necs Np Silicon Transistor

 

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California Eastern Labs
NE681M13
NEC's NPN SILICON TRANSISTOR
NEW MINIATURE M13 PACKAGE:
Small transistor outline
1.0 X 0.5 X 0.5 mm
Low profile / 0.50 mm package height
Flat lead style for better RF performance
HIGH GAIN BANDWIDTH PRODUCT:
f
T
= 7 GHz
LOW NOISE FIGURE:
NF = 1.4 dB
FEATURES
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE M13
PART NUMBER
NE681M13
EIAJ
1
REGISTERED NUMBER
2SC5615
PACKAGE OUTLINE
M13
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
f
T
Gain Bandwidth at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
GHz
4.5
7
NF
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
dB
1.4
2.7
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
dB
10
12
h
FE2
Forward Current Gain at V
CE
= 3 V, I
C
= 7 mA
80
145
I
CBO
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
A
0.8
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
A
0.8
C
RE3
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
pF
0.9
ELECTRICAL CHARACTERISTICS
(T
A
= 25C)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
California Eastern Laboratories
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width 350 s, duty cycle 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
DESCRIPTION
NEC's NE681M13 transistor is ideal for low noise, high gain,
and low cost amplifier applications. NEC's new low profile/
flat lead style "M13" package is ideal for today's portable
wireless applications. The NE681 is also available in chip,
Micro-x, and six different low cost plastic surface mount
package styles.
+0.1
0.05
+0.1
0.05
+0.1
0.05
0.5
3
0.1
0.1
1
2
1.0
+0.1
0.05
+0.1
0.05
0.3
0.35
0.35
0.7
0.15
+0.1
0.05
0.15
0.2
0.2
0.2
0.125
0.50.05
X X
Bottom View
1
2
3
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. With device mounted on 1.08 cm
2
X 1.2 mm glass epoxy board.
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
20
V
CEO
Collector to Emitter Voltage
V
10
V
EBO
Emitter to Base Voltage
V
1.5
I
C
Collector Current
mA
65
P
T2
Total Power Dissipation
mW
140
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25C)
NE681M13
Collector Current, I
C
(mA)
DC Forward Current Gain, h
FE
FORWARD CURRENT GAIN vs.
COLLECTOR CURRENT
TYPICAL PERFORMANCE CURVES
(T
A
= 25C)
V
CE
= 8 V
500
300
200
100
70
50
30
20
10
1 2 3 5 7 10 20 30 50
Collector to Emitter Voltage, V
CE
(V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
45
55
65
25
15
5
35
0
2
4
8
10
6
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
2/09/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
PART NUMBER
QUANTITY
NE681M13-A
NE681M13-T3-A
ORDERING INFORMATION
3-189
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
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per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
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-A
-AZ
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