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Datasheet: NE678M04-T2-A (California Eastern Labs)

NECs NE678M04 is fabricated using NECs HFT3 waferprocess. WithA transition frequency...

 

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California Eastern Labs
NE678M04
NEC's MEDIUM POWER NPN
SILICON HIGH FREQUENCY TRANSISTOR
R55
2.050.1
1.250.1
3
1.30
1
4
2
0.65
0.65
1.25
2.00.1
+0.30
+0.01
-0.05
0.65
0.65
+0.40
+0.30
-0.05
(leads 1, 3 and ,4)
0.590.05
+0.1
1
+0.1
-0.05
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
Notes:
1. Pulsed measurement, pulse width 350 s, duty cycle 2 %.
2. Collector to Base capacitance measured by capacitance meter(automatic balance bridge method) when emitter pin is connected to the
guard pin of capacitance meter.
3. Electronic Industrail Association of Japan.
4.
DESCRIPTION
NEC's NE678M04 is fabricated using NEC's HFT3 wafer
process. With a transition frequency of 12 GHz, the NE678M04
is usable in applications from 100 MHz to 3 GHz. The NE678M04
provides P1dB of 18 dBm, even with low voltage and low
current, making this device an excellent choice for the driver
stage for mobile or fixed wireless applications.
The NE678M04 is housed in NEC's new low profile/flat lead
style "M04" package
HIGH GAIN BANDWIDTH:
f
T
= 12 GHz
HIGH OUTPUT POWER:
P
-1dB
= 18 dBm at 1.8 GHz
HIGH LINEAR GAIN:
G
L
= 13 dB at 1.8 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of only 0.59 mm
Flat lead style for better RF performance
FEATURES
PART NUMBER
NE678M04
PACKAGE OUTLINE
M04
EIAJ
3
REGISTRATION NUMBER
2SC5753
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
I
CBO
Collector Cutoff Current at V
CB
= 5V, I
E
= 0
nA
100
I
EBO
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
nA
100
h
FE
DC Current
1
Gain at V
CE
= 3 V, I
C
= 30 mA
75
120
150
P
1dB
Output Power at 1 dB compression point at V
CE
= 2.8 V, I
CQ
= 10 mA,
dBm
18.0
f = 1.8 GHz, P
in
= 7 dBm
G
L
Linear Gain at V
CE
= 2.8 V, I
C
= 10 mA, f = 1.8 GHz, P
in
= -5 dBm
dB
13.0
MAG
Maximum Available Gain
4
at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
dBm
13.5
|S
21E
|
2
Insertion Power Gain at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
dB
8.0
10.5
c
Collector Efficiency at V
CE
= 2.8 V, I
CQ
= 10 mA, f = 1.8 GHz,
%
55
P
in
= 7 dBm
NF
Noise Figure at V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz, Z
S
= Z
opt
dB
1.7
2.5
f
T
Gain Bandwidth at V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
GHz
12.0
Cre
Reverse Transfer Capacitance
2
at V
CB
= 3 V, I
C
= 0, f = 1 MHz
pF
0.42
0.7
ELECTRICAL CHARACTERISTICS
(T
A
= 25C)
DC
RF
California Eastern Laboratories
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Mounted on a 1.08cm
2
x 1.0 mm thick glass epoxy PCB.
SYMBOLS
PARAMETERS
UNITS
RATINGS
V
CBO
Collector to Base Voltage
V
9.0
V
CEO
Collector to Emitter Voltage
V
6.0
V
EBO
Emitter to Base Voltage
V
2.0
I
C
Collector Current
mA
100
P
T
Total Power Dissipation
2
mW
205
T
J
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25C)
PART NUMBER
QUANTITY
NE678M04-T2-A
3k pcs./reel
ORDERING INFORMATION
SYMBOLS
PARAMETERS
UNITS
RATINGS
R
th j-a
Thermal Resistance from
C/W
600
Junction to Ambient
THERMAL RESISTANCE
Note:
1. Mounted on a 1.08cm
2
x 1.0 mm thick glass epoxy PCB.
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN
vs. COLLECTOR CURRENT
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
TYPICAL PERFORMANCE CURVES
(T
A
= 25 C)
NE678M04
300
250
200
205
150
100
50
0
25
50
75
100
125
150
Mounted on Glass Epoxy PCB
(1.08 cm
2
x 1.0 mm (t) )
1.0
f= 1 MHz
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
100
90
80
70
60
50
40
30
20
10
0
2
4
6
8
700
A
600
A
500
A
400
A
300
A
200
A
I
B
=100
A
1000
V
CE
= 3 V
100
10
0.1
1
10
100
Total Power Dissipation P
out
(mW)
Ambient Temperature T
A
(C)
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
DC Current Gain (h
FE
)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. COLLECTOR CURRENT
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
TYPICAL PERFORMANCE CURVES
(T
A
= 25 C)
NE678M04
INSERTION POWER GAIN,
MAG vs. COLLECTOR CURRENT
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
15
V
CE
= 3 V
f = 2 GHz
10
5
0
1
10
100
V
CE
= 3 V
I
C
= 30 mA
35
30
25
20
15
10
5
0
0.1
1
10
MSG
|S
21e
|
2
MAG
V
CE
= 3 V
f = 1 GHz
25
20
15
10
5
0
1
10
100
|S
21e
|
2
MSG
MAG
V
CE
= 3 V
f = 2 GHz
100
10
1
0
5
10
15
20
25
|S
21e
|
2
MAG
MSG
V
CE
= 3 V
f = 2.5 GHz
100
10
1
0
5
10
15
20
25
|S
21e
|
2
MAG
8
6
4
4
0
2
0
1
10
100
8
12
16
G
a
NF
V
CE
= 3 V
f = 2 GHz
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
Insertion Power Gain |S
21e
|
2
, (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (mA)
Insertion Power Gain |S
21e
|
2
, (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current I
C
(mA)
Insertion Power Gain |S
21e
|
2
, (dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current I
C
(mA)
Insertion Power Gain |S
21e
|
2
, (dB)
Maximum Available Power Gain MAG (dB)
Collector Current I
C
(mA)
Noise Figure NF (dB)
Collector Current I
C
(mA)
Associated Gain G
a
(dB)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
TYPICAL PERFORMANCE CURVES
(T
A
= 25 C)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dbm)
Power Gain G
p
(dB)
Input Power P
in
(dBm)
Output Power P
out
(dbm)
Power Gain G
p
(dB)
Input Power P
in
(dBm)
Output Power P
out
(dbm)
Power Gain G
p
(dB)
Input Power P
in
(dBm)
Output Power P
out
(dbm)
Power Gain G
p
(dB)
Input Power P
in
(dBm)
25
V
CE
= 3.2 V
f = 0.9 GHz
I
cq
= 10 mA (RF OFF)
20
200
150
100
50
0
250
15
10
5
0
-10
-5
0
5
P
out
G
P
I
C
C
10
15
25
V
CE
= 2.8 V
f = 1.8 GHz
I
cq
= 10 mA (RF OFF)
20
200
150
100
50
0
250
15
10
5
0
-10
-5
0
5
P
out
G
P
I
C
C
10
15
25
V
CE
= 2.8 V
f = 1.8 GHz
I
cq
= 10 mA (RF OFF)
20
200
150
100
50
0
250
15
10
5
0
-10
-5
0
5
P
out
G
P
I
C
C
10
15
25
V
CE
= 3.2 V
f = 1.8 GHz
I
cq
= 10 mA (RF OFF)
20
200
150
100
50
0
250
15
10
5
0
-10
-5
0
5
P
out
G
P
I
C
C
10
15
25
V
CE
= 3.2 V
f = 2.4 GHz
I
cq
= 10 mA (RF OFF)
20
200
150
100
50
0
250
15
10
5
0
-10
-5
0
5
G
P
I
C
C
10
15
P
out
NE678M04
Collector Current I
C
(mA),
Collector Efficiency
c (%)
Collector Current I
C
(mA),
Collector Efficiency
c (%)
Collector Current I
C
(mA),
Collector Efficiency
c (%)
Collector Current I
C
(mA),
Collector Efficiency
c (%)
NE678M04
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.100
0.72
-45.97
23.42
152.40
0.02
65.62
0.90
-29.51
0.10
29.97
0.200
0.68
-81.43
19.17
132.28
0.04
52.02
0.74
-51.31
0.18
26.71
0.300
0.65
-106.66
15.41
118.19
0.05
42.17
0.61
-66.86
0.26
24.93
0.400
0.63
-124.06
12.56
108.21
0.05
37.11
0.52
-77.84
0.34
23.61
0.500
0.62
-136.69
10.53
100.63
0.06
33.66
0.46
-86.27
0.42
22.62
0.600
0.60
-148.20
8.85
94.98
0.06
32.53
0.38
-92.24
0.56
21.75
0.700
0.60
-155.78
7.72
89.80
0.06
31.81
0.36
-98.70
0.62
21.00
0.800
0.60
-161.77
6.86
85.45
0.06
31.70
0.34
-102.52
0.68
20.32
0.900
0.60
-167.38
6.15
81.38
0.07
31.29
0.33
-106.64
0.74
19.72
1.000
0.60
-171.69
5.59
77.66
0.07
31.31
0.32
-110.16
0.79
19.17
1.500
0.59
170.30
3.81
61.44
0.08
33.17
0.31
-123.84
1.00
16.81
1.800
0.59
161.69
3.21
52.84
0.09
33.52
0.32
-130.08
1.07
13.98
1.900
0.59
158.90
3.05
50.05
0.09
33.69
0.32
-131.91
1.10
13.41
2.000
0.59
156.19
2.90
47.32
0.09
33.45
0.33
-133.96
1.11
12.93
2.500
0.59
142.62
2.35
33.99
0.11
32.55
0.36
-142.01
1.14
11.02
3.000
0.60
128.82
1.97
21.32
0.13
29.86
0.39
-149.47
1.15
9.63
3.500
0.61
114.69
1.69
9.12
0.14
26.40
0.43
-156.17
1.12
8.62
4.000
0.63
101.16
1.47
-2.44
0.16
21.89
0.47
-163.41
1.07
7.95
4.500
0.65
89.04
1.29
-13.44
0.18
16.66
0.50
-171.39
1.03
7.59
5.000
0.67
78.45
1.15
-23.86
0.19
10.92
0.53
179.62
0.98
7.69
5.500
0.69
68.99
1.02
-33.79
0.21
4.77
0.57
170.14
0.94
6.86
6.000
0.71
59.90
0.92
-43.00
0.23
-1.43
0.60
160.66
0.92
6.09
NE678M04
V
C
= 2 V, I
C
= 10 mA
TYPICAL SCATTERING PARAMETERS
(T
A
= 25C)
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + | | - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
j50
j100
j25
j10
0
-j10
-j25
-j50
-j100
10
50 100
25
S22
S11
+0
+0
+90
+45
5
20
-45
-90
-135
+180
+135
10 15
NE678M04
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.100
0.52
-74.30
39.85
141.89
0.02
63.14
0.79
-43.24
0.22
33.48
0.200
0.55
-114.70
28.29
120.64
0.03
50.10
0.58
-69.59
0.37
30.30
0.300
0.56
-136.33
20.98
108.33
0.03
45.90
0.46
-86.51
0.49
28.27
0.400
0.56
-149.34
16.42
100.26
0.03
45.26
0.40
-97.94
0.61
26.78
0.500
0.56
-158.35
13.45
94.25
0.04
45.86
0.36
-106.44
0.69
25.46
0.600
0.56
-167.02
11.22
90.08
0.04
47.13
0.30
-115.48
0.83
24.40
0.700
0.57
-172.39
9.70
85.86
0.04
48.18
0.28
-121.83
0.88
23.43
0.800
0.57
-176.68
8.57
82.27
0.05
49.01
0.27
-125.22
0.92
22.51
0.900
0.57
179.14
7.66
78.87
0.05
49.82
0.27
-128.89
0.96
21.72
1.000
0.57
176.07
6.93
75.71
0.06
50.22
0.26
-131.89
0.98
20.95
1.500
0.57
161.30
4.70
61.65
0.08
49.69
0.27
-142.80
1.07
16.35
1.800
0.57
153.82
3.96
53.96
0.09
48.26
0.27
-147.21
1.09
14.70
1.900
0.57
151.23
3.76
51.43
0.09
47.59
0.28
-148.33
1.09
14.25
2.000
0.57
148.83
3.58
48.96
0.10
46.86
0.28
-149.67
1.09
13.81
2.500
0.57
136.19
2.90
36.74
0.12
42.26
0.31
-154.80
1.09
12.03
3.000
0.57
123.25
2.44
24.91
0.14
36.84
0.34
-159.87
1.08
10.71
3.500
0.58
109.78
2.10
13.41
0.16
30.78
0.37
-164.45
1.06
9.71
4.000
0.60
96.93
1.84
2.30
0.18
24.27
0.40
-170.06
1.04
9.03
4.500
0.62
85.43
1.63
-8.43
0.19
17.67
0.43
-176.72
1.01
8.78
5.000
0.64
75.45
1.46
-18.79
0.21
11.05
0.47
175.39
0.98
8.46
5.500
0.65
66.54
1.32
-28.80
0.22
4.47
0.50
166.91
0.95
7.72
6.000
0.67
57.90
1.19
-38.45
0.24
-2.21
0.53
158.44
0.93
7.05
NE678M04
V
C
= 3 V, I
C
= 30 mA
TYPICAL SCATTERING PARAMETERS
(T
A
= 25C)
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + | | - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
j50
j100
j25
j10
0
-j10
-j25
-j50
-j100
10
50 100
25
S22
S11
+90
+45
+0
10 20 30
-45
-90
-135
+180
+135
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
Internet: http://WWW.CEL.COM
02/07/2002
DATA SUBJECT TO CHANGE WITHOUT NOTICE
NE678M04
FREQUENCY
S
11
S
21
S
12
S
22
K
MAG
1
GHz
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
(dB)
0.100
0.46
-92.27
47.62
136.35
0.01
61.08
0.69
-50.06
0.35
35.14
0.200
0.51
-129.65
31.64
115.69
0.02
51.85
0.49
-77.41
0.51
31.73
0.300
0.53
-147.72
22.84
104.50
0.03
50.27
0.39
-94.24
0.65
29.60
0.400
0.54
-158.40
17.67
97.25
0.03
51.38
0.34
-105.50
0.76
27.89
0.500
0.55
-165.77
14.38
91.83
0.03
53.36
0.31
-113.55
0.84
26.43
0.600
0.55
-173.25
11.98
88.17
0.04
54.92
0.26
-123.64
0.94
25.20
0.700
0.56
-177.75
10.33
84.28
0.04
55.88
0.25
-129.49
0.98
24.08
0.800
0.56
178.53
9.12
80.93
0.04
56.52
0.25
-132.28
1.00
22.69
0.900
0.56
174.86
8.14
77.76
0.05
56.38
0.24
-135.41
1.02
21.26
1.000
0.56
172.16
7.36
74.77
0.05
57.10
0.24
-138.20
1.04
20.18
1.500
0.56
158.57
4.98
61.30
0.08
55.00
0.25
-147.24
1.08
16.43
1.800
0.55
151.40
4.19
53.86
0.09
52.53
0.26
-150.84
1.09
14.89
1.900
0.55
148.96
3.98
51.41
0.09
51.60
0.26
-151.75
1.09
14.44
2.000
0.55
146.64
3.79
49.00
0.10
50.56
0.27
-152.82
1.09
14.02
2.500
0.55
134.28
3.07
37.07
0.12
44.90
0.29
-157.03
1.09
12.29
3.000
0.56
121.53
2.58
25.46
0.14
38.56
0.32
-161.31
1.07
10.96
3.500
0.57
108.26
2.22
14.13
0.16
32.10
0.36
-165.52
1.06
9.97
4.000
0.58
95.62
1.95
3.18
0.18
25.40
0.39
-170.85
1.03
9.29
4.500
0.60
84.34
1.73
-7.49
0.20
18.42
0.42
-177.21
1.01
9.02
5.000
0.62
74.53
1.55
-17.79
0.21
11.57
0.45
175.01
0.98
8.67
5.500
0.64
65.76
1.40
-27.80
0.22
4.84
0.48
166.70
0.96
7.95
6.000
0.65
57.22
1.27
-37.47
0.24
-1.99
0.51
158.43
0.94
7.29
NE678M04
V
C
= 5 V, I
C
= 70 mA
TYPICAL SCATTERING PARAMETERS
(T
A
= 25C)
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
K - 1
).
2
(
K
= S
11
S
22
- S
21
S
12
When K
1, MAG is undefined and MSG values are used. MSG =
|S
21
|
|S
12
|
, K = 1 + | | - |S
11
| - |S
22
|
2
2
2
2 |S
12
S
21
|
,
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
j50
j100
j25
j10
0
-j10
-j25
-j50
-j100
10
50 100
S22
S11
25
+90
+45
+0
+0
10 20 30 40
-45
-90
-135
+180
+135
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
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Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates
that the device is Pb-free. The AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL's understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
-AZ
Lead (Pb)
< 1000 PPM
Not Detected
(*)
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance
content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information
provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better
integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate
information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL
suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for
release.
In no event shall CEL's liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to
customer on an annual basis.
See CEL Terms and Conditions for additional clarification of warranties and liability.
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