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Datasheet: NE3508M04-A (California Eastern Labs)

HETERO JUNCTION FIELD EFFECT TRANSISITOR

 

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California Eastern Labs
PRELIMINARY PRODUCT INFORMATION
L to S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
- Super Low Noise Figure & Associated Gain :
NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA
- Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. )
APPLICATIONS
- Satellite Radio(SDARS, DMB, etc.) antenna LNA
- LNA for Micro-wave communication system
ORDERING INFORMATION
Part Number
Order Number
Quantity
Marking
Supplying Form
NE3508M04
NE3508M04-A
50pcs (Non reel)
NE3508M04-T2
NE3508M04-T2-A
3 Kpcs/reel
V79
- 8 mm wide emboss taping
- Pin1(Source), Pin2(Drain)
face the perforation side of the tape
Remark To order evaluation samples, please contact your local NEC sales office.
Part number for sample order: NE3508M04
ABSOLUTE MAXIMUM RATINGS ( T
A
=+ 25
C )
PARAMETER
SYMBOL
RATINGS
UNIT
V
e
g
a
t
l
o
V
e
c
r
u
o
S
o
t
n
i
a
r
D
DS
V
0
.
4
V
e
g
a
t
l
o
V
e
c
r
u
o
S
o
t
e
t
a
G
GS
V
0
.
3
-
I
t
n
e
r
r
u
C
n
i
a
r
D
D
I
DSS
A
m
0
0
4
G
I
t
n
e
r
r
u
C
e
t
a
G
A
Total Power Dissipation
P
tot
Note
W
m
5
7
1
T
e
r
u
t
a
r
e
p
m
e
T
l
e
n
n
a
h
C
ch
+150
C
T
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
stg
- 65 to +150
C
Note Mounted on 1.08cm
2
X 1.0mm(t) glass epoxy PCB
Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge.
HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3508M04
Document No. P*****EJ0V0PM00 (
10th
edition)
NEC Compound Semiconductor Devices 2005
Date Published
October 2005
CP(K)
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
NE3508M04
RECOMMENDED OPERATING CONDITIONS(TA = +25
C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Drain to Source Voltage
V
DS
---
2
3
V
I
t
n
e
r
r
u
C
n
i
a
r
D
D
---
10
30
mA
m
B
d
0
-
-
-
-
-
-
n
i
P
r
e
w
o
P
t
u
p
n
I
ELECTRICAL CHARACTERISTICS T
A
= +25
C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gate to Source Leak Current
I
GSO
V
GS
=-3V
---
1
20
A
Saturated Drain Current
I
DSS
V
DS
=2V, V
GS
=0V
60
90
120
mA
Gate to Source Cutoff Voltage
V
GS(off)
V
DS
=2V, I
D
=100
A
-0.35
-0.5
-0.65
V
Trans conductance
gm
V
DS
=2V, I
D
=10mA
100
---
---
mS
-
-
-
F
N
e
r
u
g
i
F
e
s
i
o
N
0.45
0.9
dB
a
G
n
i
a
G
d
e
t
a
i
c
o
s
s
A
V
DS
=2V, I
D
=10mA
f 2GHz
12
14
---
dB
Output Power at 1dB Gain
Compression Point
Po
(1dB)
V
DS
=3V,
I
D
=30mA(Non-RF)
f 2GHz
---
18
---
dBm
The information in this document is subject to change without notice.
PRELIMINARY PRODUCT INFORMATION
NE3508M04
TYPICAL CHARACTERISTICS T
A
= +25
C)
Note) Under examination
Mounted on Glass Epoxy PCB
(1.08 cm
2
x 1.0mm(t) )
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. FREQUENCY
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
5
10
15
frequency (GHz)
M
i
n
i
m
u
m

N
o
i
s
e

F
i
g
u
r
e



N
F
m
i
n


(
d
B
)
0
2
4
6
8
10
12
14
16
18
20
A
s
s
o
c
i
a
t
e
d

G
a
i
n


G
a


(
d
B
)
NFmin
Ga
VDS=2V, ID=10mA
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DREIN CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
10
20
30
40
Drein Current ID (mA)
M
i
n
i
m
u
m

N
o
i
s
e

F
i
g
u
r
e
N
F
m
i
n


(
d
B
)
0
2
4
6
8
10
12
14
16
18
20
A
s
s
o
c
i
a
t
e
d

G
a
i
n


G
a


(
m
A
)
NFmin
Ga
f=2GHz, VDS=2V
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. Drein to Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1.0
1.5
2.0
2.5
3.0
3.5
Drain to Source Voltage VDS (V)
M
i
n
i
m
u
m

N
o
i
s
e

F
i
g
u
r
e


N
F
m
i
n


(
d
B
)
0
2
4
6
8
10
12
14
16
18
20
A
s
s
o
c
i
a
t
e
d

G
a
i
n


G
a


(
d
B
)
NFmin
Ga
f=2GHz, ID=10mA
DRAIN CURRENT vs. GATE to SOURCE VOLTAGE
0
10
20
30
40
50
60
70
80
90
100
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
Gate to Source Voltage VGS (V)
D
r
a
i
n

C
u
r
r
e
n
t




I
D


(
m
A
)
V
DS
=2V
VGS = 0 V
- 0.1 V
- 0.2 V
- 0.3 V
- 0.4 V
- 0.5 V
0
2
4
6
8
10
Drain

Current



ID


(mA)
Drain to Source Voltage VDS
0
1
2
3
4
5
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
NE3508M04
REFERENCE DATA
-80
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
40
-25
-20
-15
-10
-5
0
5
10
15
20
25
Pin (dBm)
P
o
u
t


(
d
B
m
)
0
5
10
15
20
25
30
35
40
45
50
I
d


(
m
A
)
Pout(2tone)
IM3L
IM3H
Id
@f=2.5GHz, VDS=3V, ID=30mA(non-RF)
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DREIN CURRENT
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
10
20
30
40
Drein Current ID (mA)
M
i
n
i
m
u
m

N
o
i
s
e

F
i
g
u
r
e


N
F
m
i
n


(
d
B
)
0
2
4
6
8
10
12
14
16
18
20
A
s
s
o
c
i
a
t
e
d

G
a
i
n



G
a


(
d
B
)
NFmin
Ga
f=2.5GHz, VDS=2V
MINIMUM NOISE FIGURE, ASSOCIATED GAIN
vs. DREIN TO SOURCE VOLTAGE
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1.0
1.5
2.0
2.5
3.0
3.5
Drein to Source Voltage VDS (V)
M
i
n
i
m
u
m

N
o
i
s
e

F
i
g
u
r
e



N
F
m
i
n


(
d
B
)
0
2
4
6
8
10
12
14
16
18
20
A
s
s
o
c
i
a
t
e
d

G
a
i
n



G
a


(
d
B
)
NFmin
Ga
f=2.5GHz, ID=10mA
NE3508M04
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD unit mm
Pin Connections
1. Source
2. Drain
3. Source
4. Gate
1.25
(1.05)
1.3
2
.0
0.1
3
4
2
1
( Top View )
( Bottom View )
V79
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