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Datasheet: CSC2073 (Continental Device India)

CSA940 PNP PLASTIC POWER TRANSISTOR, CSC2073 NPN PLASTIC POWER TRANSISTOR

 

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Continental Device India
Continental Device India Limited
Data Sheet
Page 1 of 3
CSA940
PNP PLASTIC POWER TRANSISTOR
CSC2073
NPN PLASTIC POWER TRANSISTOR
Power Amplifier Applications and Vertical Output Applications
ABSOLUTE MAXIMUM RATINGS
Collector-base voltage (open emitter)
V
CBO
max.
150 V
Collector-emitter voltage (open base)
V
CEO
max.
150 V
Collector current
I
C
max.
1.5 A
Total power dissipation up to T
C
= 25C
P
tot
max.
25 W
Junction temperature
T
j
max.
150 C
Collector-emitter saturation voltage
I
C
= 500 mA; I
B
= 50 mA
V
CEsat
max.
1.5 V
D.C. current gain
I
C
= 500 mA; V
CE
= 10 V
h
FE
min.
40
max.
140
RATINGS (at T
A
=25C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
V
CBO
max.
150 V
Collector-emitter voltage (open base)
V
CEO
max.
150 V
Emitter-base voltage (open collector)
V
EBO
max.
5.0 V
CSA940, CSC2073
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
1 2
3
J
M
G
D
H
A
O
O
K
N
L
F
E
C
DIM
MIN .
MAX.
A
ll
d
imin
s
io
n
s
in
m
m
.
A
14.42
16.51
B
9.63
10.67
C
3.56
4.83
D
0.90
E
1.15
1.40
F
3.75
3.88
G
2.29
2.79
H
2.54
3.43
J
0.56
K
12.70
14.73
L
2.80
4.07
M
2.03
2.92
N
31.24
O
DEG 7
1
2
3
4
TO-220 Plastic Package
Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current
I
C
max.
1.5 A
Base current
I
B
max.
0.5 A
Total power dissipation up to T
C
= 25C
P
tot
max.
25 W
Total power dissipation up to T
A
= 25C
P
tot
max.
1.5 W
Junction temperature
T
j
max.
150 C
Storage temperature
T
stg
65 to +150 C
CHARACTERISTICS
T
amb
= 25C unless otherwise specified
Collector cutoff current
I
E
= 0; V
CB
= 120 V
I
CBO
max.
10 A
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
I
EBO
max.
10 A
Breakdown voltages
I
C
= 1 mA; I
B
= 0
V
CEO
min.
150 V
I
C
= 1 mA; I
E
= 0
V
CBO
min.
150 V
I
E
= 1 mA; I
C
= 0
V
EBO
min.
5.0 V
Saturation voltages
I
C
= 500 mA; I
B
= 50 mA
V
CEsat
max.
1.5 V
Base emitter on voltage
I
C
= 500 mA; V
CE
= 10 V
V
BE(on)
min.
0.65 V
max.
0.85 V
D.C. current gain
I
C
= 500 mA; V
CE
= 10 V
h
FE
min.
40
max.
140
Output capacitance at f = 1 MHz
I
E
= 0; V
CB
= 10 V
NPN
C
o
typ.
35 pF
PNP
typ.
55 pF
Transition frequency
I
C
= 500 mA; V
CE
= 10 V
f
T
typ.
4 MHz
CSA940, CSC2073
Continental Device India Limited
Data Sheet
Page 3 of 3
Customer Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/
CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete
information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product;
neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life
saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor
Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own
risk and CDIL will not be responsible for any damages resulting from such sale(s).
CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119
email@cdil.com www.cdilsemi.com
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