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Datasheet: M116 (Calogic, LLC)

Diode Protected N-Channel Enhancement Mode MOSFET General Purpose Amplifier

 

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Calogic, LLC
Diode Protected N-Channel
Enhancement Mode MOSFET
General Purpose Amplifier
M116
FEATURES

Low I
GSS

Integrated Zener Clamp for Gate Protection
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Gate to Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Gate Zener Current . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.1mA
Storage Temperature Range . . . . . . . . . . . . . -65
o
C to +200
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +125
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW
Derate
above
25
o
C . . . . . . . . . . . . . . . . . . . . . . . 2.2mW/
o
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
M116
Hermetic TO-72
-55
o
C to +125
o
C
XM116
Sorted Chips in Carriers
-55
o
C to +125
o
C
CORPORATION
PIN CONFIGURATION
TO-72
G
D
C
S
1003Z
DEVICE SCHEMATIC
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C and V
BS
= 0 unless otherwise specified)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
r
DS(on)
Drain Source ON Resistance
100
V
GS
= 20V, I
D
= 100
A
200
V
GS
= 10V, I
D
= 100
A
V
GS(th)
Gate Threshold Voltage
1
5
V
V
GS
= V
DS
, I
D
= 10
A
BV
DSS
Drain-Source Breakdown Voltage
30
I
D
= 1
A, V
GS
= 0
BV
SDS
Source-Drain Breakdown Voltage
30
I
S
= 1
A, V
GD
= V
BD
= 0
BV
GBS
Gate-Body Breakdown Voltage
30
60
I
G
= 10
A, V
SB
= V
DB
= 0
I
D(OFF)
Drain Cuttoff Current
10
nA
V
DS
= 20V, V
GS
= 0
I
S(OFF)
Source Cutoff Current
10
V
SD
= 20V, V
GD
= V
BD
= 0
I
GSS
Gate-Body Leakage
100
pA
V
GS
= 20V, V
DS
= 0
C
gs
Gate-Source (Note 1)
2.5
pF
V
GB
= V
DB
= V
SB
= 0, f = 1MHz
Body Guarded
C
gd
Gate-Drain Capacitance (Note 1)
2.5
C
db
Drain-Body Capacitance (Note 1)
7
V
GB
= 0, V
DB
= 10V, f = 1MHz
C
iss
Input Capacitance (Note 1)
10
V
GB
= 0, V
DB
= 10V, V
BS
= 0, f = 1MHz
NOTE 1: For design reference only, not 100% tested.
1
2
3
4
0330
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