HTML datasheet archive (search documentation on electronic components) Search datasheet (1.687.043 components)
Search field

Datasheet: J308-310 (Calogic, LLC)

25 V, N-channel JFET High Frequency Amplifier

 

Download: PDF   ZIP
Calogic, LLC
N-Channel JFET
High Frequency Amplifier
J308 J310 / SST308 SST310
FEATURES

Industry Standard Part in Low Cost Plastic Package

High Power Gain

Low Noise

Dynamic Range Greater Than 100dB

Easily Matched to 75
Input
APPLICATIONS

VHF/UHF Amplifiers

Oscillators

Mixers
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
o
C unless otherwise specified)
Drain-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . -25V
Continuous Forward Gate Current . . . . . . . . . . . . . . . . -10mA
Storage Temperature Range . . . . . . . . . . . . . -55
o
C to +150
o
C
Operating Temperature Range . . . . . . . . . . . -55
o
C to +135
o
C
Lead Temperature (Soldering, 10sec) . . . . . . . . . . . . . +300
o
C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW
Derate
above
25
o
C . . . . . . . . . . . . . . . . . . . . . . 3.27mW/
o
C
NOTE: Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
Part
Package
Temperature Range
J308-310
Plastic TO-92
-55
o
C to +135
o
C
SST308-310 Plastic SOT-23
-55
o
C to +135
o
C
For Sorted Chips in Carriers see U308 series.
CORPORATION
PIN CONFIGURATION
TO-92
S G
D
5021
SOT-23
G
S
D
PRODUCT MARKING (SOT-23)
SST308
Z08
SST309
Z09
SST310
Z10
ELECTRICAL CHARACTERISTICS (Continued) (T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
308
309
310
UNITS
TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
C
gd
Gate-Drain Capacitance
1.8
2.5
1.8
2.5
1.8
2.5
pF
V
DS
= 10V,
V
GS
= -10
f = 1MHz
(Note 2)
C
gs
Gate-Source Capacitance
4.3
5.0
4.3
5.0
4.3
5.0
e
n
Equivalent Short-Circuit
Input Noise Voltage
10
10
10
nV

Hz
/
4nVXIXBG`QXHz
V
DS
= 10V,
I
D
= 10mA
f = 100Hz
(Note 2)
Re
(Vfs)
Common-Source Forward
Transconductance
12
12
12
S
V
DS
= 10V,
I
D
= 10mA
(Note 2)
f = 105MHz
Re
(Vfg)
Common-Gate Input
Conductance
14
14
14
Re
(Vis)
Common-Source Input
Conductance
0.4
0.4
0.4
Re
(Vos)
Common-Source Output
Conductance
0.15
0.15
0.15
G
pg
Common-Gate Power Gain
at Noise Match
16
16
16
dB
NF
Noise Figure
1.5
1.5
1.5
G
pg
Common-Gate Power Gain
at Noise Match
11
11
11
f = 450MHz
NF
Noise Figure
2.7
2.7
2.7
NOTES: 1. Pulse test PW 300
s, duty cycle
3%.
2. For design reference only, not 100% tested.
J308 J310 / SST308 SST310
CORPORATION
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C unless otherwise specified)
SYMBOL
PARAMETER
308
309
310
UNITS
TEST CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
BV
GSS
Gate-Source Breakdown
Voltage
-25
-25
-25
V
I
G
= -1
A, V
DS
= 0
I
GSS
Gate Reverse Current
-1.0
-1.0
-1.0
nA
V
GS
= -15V,
-1.0
-1.0
-1.0
A
V
DS
= 0
T
A
= 125
o
V
GS(off)
Gate-Source
Cutoff Voltage
-1.0
-6.5
-1.0
-4.0
-2.0
-6.5
V
VDS = 10V, I
D
= 1nA
I
DSS
Saturation Drain Current
(Note 1)
12
60
12
30
24
60
mA
V
DS
= 10V, V
GS
= 0
V
GS(f)
Gate-Source
Forward Voltage
1.0
1.0
1.0
V
V
DS
= 0, I
G
= 1mA
g
fs
Common-Source Forward
Transconductance
8,000
17,000
10,000 17,000
8,000
17,000
S
V
DS
= 10V
I
D
= 10mA
(Note 2)
f = 1kHz
g
os
Common-Source Output
Conductance
250
250
250
g
fg
Common-Gate Forward
Transconductance
13,000
13,000
12,000
g
og
Common Gate Output
Conductance
150
150
150
© 2018 • ICSheet
Contact form
Main page