HTML datasheet archive (search documentation on electronic components) Search datasheet (1.687.043 components)
Search field

Datasheet: J212 (Calogic, LLC)

N-Channel JFET

 

Download: PDF   ZIP
Calogic, LLC
N-Channel JFET
J210 J212 / SSTJ210 SSTJ212
FEATURES

Low Noise

Low Leakage

High Power Gain
APPLICATIONS

General Purpose Amplifiers

VHF/UHF Amplifiers

Mixers

Oscillators
DESCRIPTION
The J210 Series is an N-Channel JFET single device
encapsulated in a TO-92 plastic package well suited for
automated assembly. The device features low leakage,
typically under 2 pA, low noise, under 10 nano volts per
square hertz at 10 hertz and high gain. This series is
excellent for mixer, oscillators and amplifier applications.
ORDERING INFORMATION
Part
Package
Temperature Range
J210-11
Plastic TO-92 Package
-55
o
C to +135
o
C
SSTJ210-11
Plastic SOT-23
-55
o
C to +135
o
C
PIN CONFIGURATION
CORPORATION
D S
G
TO-92
BOTTOM VIEW
1
2
3
1
2
3
DRAIN
SOURCE
GATE
CJ1
SOT-23
G
S
D
PRODUCT MARKING (SOT-23)
SSTJ210
Z10
SSTJ211
Z11
SSTJ212
Z12
J210 J212 / SSTJ210 SSTJ212
CORPORATION
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
o
C unless otherwise noted)
Parameter/Test Condition
Symbol
Limit
Unit
Gate-Drain Voltage
V
GD
-25
V
Gate-Source Voltage
V
GS
-25
V
Gate Current
I
G
10
mA
Power Dissipation
P
D
360
mW
Power Derating
3.27
mW/
o
C
Operating Junction Temperature
T
J
-55 to 135
o
C
Storage Temperature
T
stg
-55 to 150
o
C
Lead Temperature (1/16" from case for 10 seconds)
T
L
300
o
C
ELECTRICAL CHARACTERISTICS (T
A
= 25
o
C unless otherwise noted)
SYMBOL
CHARACTERISTCS
TYP
1
210
211
212
UNIT
TEST CONDITIONS
MIN
MAX
MIN
MAX
MIN
MAX
STATIC
V
(BR)GSS
Gate-Source Breakdown Voltage
-35
-25
-25
-25
V
I
G
= -1
A, V
DS
= 0V
V
GS(OFF
)
Gate-Source Cut off Voltage
-1
-3
-2.5
-4.5
-4
-6
V
DS
= 15V, I
D
= 1nA
I
DSS
Saturation Drain Current
2
2
15
7
20
15
40
mA
V
DS
= 15V, V
GS
= 0V
I
GSS
Gate Reverse Current
-1
-100
-100
-100
pA
V
GS
= -15V, V
DS
= 0V
-0.5
nA
T
A
= 125
o
C
I
G
Gate Operating Current
-1
pA
V
DG
= 10V, I
D
= 1mA
I
D(OFF)
Drain Cutoff Current
1
pA
V
DS
= 10V, V
GS
= -8V
V
GS(F)
Gate-Source Forward Voltage
0.7
V
I
G
= 1mA, V
DS
= 0V
DYNAMIC
g
fs
Common-Source Forward
Transconductance
4
12
6
12
7
12
mS
V
DS
= 15V, V
GS
= 0V
f = 1kHz
g
os
Common-Source Output
Conductance
150
200
200
S
C
iss
Common-Source Input Capacitance
4
pF
V
DS
= 15V, V
GS
= 0V
f = 1MHz
C
rss
Common-Source Reverse
Transfer Capacitance
1.5
e
n
Equivalent Input Noise Voltage
5
nV/ Hz
V
DS
= 15V, V
GS
= 0V
f = 1kHz
NOTES: 1. For design aid only, not subject to production testing.
2. Pulse test; PW = 300
s, duty cycle
3%.
© 2018 • ICSheet
Contact form
Main page