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Datasheet: 89C51ED2 (ATMEL Corporation)

8-bit Flash Microcontroller

 

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ATMEL Corporation
AT89C51RD2 / AT89C51ED2 QualPack

Rev. 0 2003 July
1
Qualification Package
AT89C51ED2
FLASH 8-bit C51 Microcontroller
64 Kbytes FLASH, 2 Kbytes EEPROM











AT89C51RD2 / AT89C51ED2
JULY 2003
AT89C51RD2 / AT89C51ED2 QualPack

2 Rev. 0 2003 July
1 Table of contents

1
TABLE OF CONTENTS............................................................................................................................................. 2
2
GENERAL INFORMATION...................................................................................................................................... 3
3
TECHNOLOGY INFORMATION ............................................................................................................................ 4
3.1
W
AFER
P
ROCESS
T
ECHNOLOGY
.............................................................................................................................. 4
3.2
P
RODUCT
D
ESIGN
................................................................................................................................................... 5
3.3
D
EVICE CROSS SECTION
.......................................................................................................................................... 6
4
QUALIFICATION ...................................................................................................................................................... 7
4.1
Q
UALIFICATION
M
ETHODOLOGY
............................................................................................................................ 7
4.2
Q
UALIFICATION
T
EST
M
ETHODS
............................................................................................................................. 8
4.3
W
AFER
L
EVEL
R
ELIABILITY
................................................................................................................................... 9
4.3.1
Electromigration ............................................................................................................................................... 9
4.3.2
Hot Carriers Injection ..................................................................................................................................... 11
4.3.3
Time Dependent Dielectric Breakdown ............................................................................................................ 12
4.3.4
FLASH Characteristics.................................................................................................................................... 14
4.4
D
EVICE
R
ELIABILITY
............................................................................................................................................ 18
4.4.1
Operating Life Testing..................................................................................................................................... 18
4.4.2
ESD / Latch-up................................................................................................................................................ 18
4.4.3
FLASH and EEPROM Data Retention and Endurance Cycling ........................................................................ 18
4.4.4
AT89C51ED2 Operating Reliability Calculation.............................................................................................. 20
4.5
AT89C51ED2 P
ACKAGING RELIABILITY
............................................................................................................... 21
4.6
AT89C51ED2 Q
UALIFICATION STATUS
................................................................................................................ 21
5
ENVIRONMENTAL INFORMATION .................................................................................................................... 22
6
OTHER DATA .......................................................................................................................................................... 23
6.1
ISO / TS16949 : 2002 C
ERTIFICATE
..................................................................................................................... 23
6.2
D
ATA
B
OOK
R
EFERENCE
...................................................................................................................................... 24
6.3
R
EVISION
H
ISTORY
.............................................................................................................................................. 24







AT89C51RD2 / AT89C51ED2 QualPack

Rev. 0 2003 July
3
2 General Information
Product Name:
AT89C51RD2
Function:
8-bit Microcontroller with 64 Kbytes FLASH
SPI Interface
Product Name:
AT89C51E2
Function:
8-bit Microcontroller with 64 Kbytes FLASH, 2 Kbytes EEPROM
SPI Interface

Wafer Process:
Logic CMOS 0.35 um with embedded FLASH

Available Package Types
PLCC 44, VQFP 44, PLCC 68, VQFP 68 ,PDIL 40
Other Forms:
Die, Wafer

Locations:
Process Development,
Atmel Colorado Springs, USA
Product Development
Atmel Nantes, France
Wafer Plant
Atmel Colorado Springs, USA
QC Responsibility
Atmel Nantes, France
Probe Test
Atmel Colorado Springs, USA
Assembly
Depending on package
Final Test
Atmel TSTI Manila, Philippines
Lot Release
Atmel Nantes, France
Shipment Control
Global Logistic Center, Philippines
Quality Assurance
Atmel Nantes, France
Reliability Testing
Atmel Nantes, France
Failure Analysis
Atmel Nantes, France




Quality Management
Atmel Nantes, France


Signed: Pascal LECUYER
AT89C51RD2 / AT89C51ED2 QualPack

4 Rev. 0 2003 July
3 Technology Information
3.1 Wafer Process Technology

Process Type (Name):
Logic 0.35um with embedded FLASH (AT56800)

Base Material:
Epitaxied Silicon
Wafer Thickness (final)
475 um
Wafer Diameter
150 mm

Number Of Masks
27

Gate Oxide (Logic transistors)
Material
Silicon Dioxide
Thickness
68A
Gate Oxide (EPROM cell)
Material
Silicon Dioxide
Thickness
390A



Polysilicon
Number of Layers
2
Thickness Poly 1
1400A Amorphous
Thickness Poly 2
3200A
Metal
Number of Layers
3
Material:
Aluminum Copper
Layer 1 Thickness
5000A
Layer 2 Thickness
5000A
Layer 3 Thickness
8000A


Passivation
Material
Oxide HDP/ Oxy-nitride
Thickness
21000A
AT89C51RD2 / AT89C51ED2 QualPack

Rev. 0 2003 July
5
3.2 Product
Design

Die Size
17,9 mm
2
Pad Size Opening / Pitch
66 um * 66 um
/ 111 um

Logic Effective Channel Length
0.35
m

Gate Poly Width (min.)
0.35
m
Gate Poly Spacing (min.)
0.42
m

Metal 1 Width
0.42
m
Metal 1 Spacing
0.49
m
Metal 2 Width
0.56
m
Metal 2 Spacing
0.49
m
Metal 3 Width
0.56
m
Metal 3 Spacing
0.49
m


Contact Size
0.35
m
Contact Spacing
0.42
m

Via 1 Size
0.42
m
Via 2 Size
0.42
m
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