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Datasheet: 49F010 (ATMEL Corporation)

1-megabit 128k X 8 5-volt Only Cmos Flash Memory

 

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ATMEL Corporation
AT49F010/HF010
1-Megabit
(128K x 8)
5-volt Only
CMOS Flash
Memory
AT49F010
AT49HF010
Features
Single Voltage Operation
- 5V Read
- 5V Reprogramming
Fast Read Access Time - 45 ns
Internal Program Control and Timer
8K bytes Boot Block With Lockout
Fast Erase Cycle Time - 10 seconds
Byte By Byte Programming - 10
s/Byte
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
- 30 mA Active Current
- 100
A CMOS Standby Current
Typical 10,000 Write Cycles
Pin Configurations
Pin Name
Function
A0 - A16
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
The AT49F010/HF010 are 5-volt-only in-system programmable and erasable Flash
Memories. Their 1-megabit of memory is organized as 131,072 words by 8 bits. Manu-
factured with Atmel's advanced nonvolatile CMOS technology, the devices offer ac-
cess times to 45 ns (HF version) with a power dissipation of just 165 mW over the
commercial temperature range. When the device is deselected, the CMOS standby
current is less than 100
A.
To allow for simple in-system reprogrammability, the AT49F010/HF010 does not re-
quire high input voltages for programming. Five-volt-only commands determine the
read and programming operation of the device. Reading data out of the device is
similar to reading from an EPROM. Reprogramming the AT49F010/HF010 is per-
formed by erasing the entire 1 megabit of memory and then programming on a byte
by byte basis. The byte programming time is a fast 50
s. The end of a program cycle
can be optionally detected by the DATA polling feature. Once the end of a byte pro-
Description
(continued)
DIP Top View
TSOP Top View
Type 1
PLCC Top View
0852AX5/97
Device Operation
READ: The AT49F010/HF010 is accessed like an
EPROM. When CE and OE are low and WE is high, the
data stored at the memory location determined by the ad-
dress pins is asserted on the outputs. The outputs are put
in the high impedance state whenever CE or OE is high.
This dual-line control gives designers flexibility in prevent-
ing bus contention.
ERASURE: Before a byte can be reprogrammed, the
128K bytes memory array (or 120K bytes if the boot block
featured is used) must be erased. The erased state of the
memory bits is a logical "1". The entire device can be
erased at one time by using a 6-byte software code. The
chip erase code consists of 6-byte load commands to spe-
cific address locations with a specific data pattern (please
refer to the Chip Erase Cycle Waveforms).
After the chip erase has been initiated, the device will in-
ternally time the erase operation so that no external clocks
are required. The maximum time needed to erase the
whole chip is t
EC
. If the boot block lockout feature has
been enabled, the data in the boot sector will not be
erased.
BYTE PROGRAMMING: Once the memory array is
erased, the device is programmed (to a logical "0") on a
byte-by-byte basis. Please note that a data "0" cannot be
programmed back to a "1"; only erase operations can con-
vert "0"s to "1"s. Programming is accomplished via the in-
ternal device command register and is a 4 bus cycle op-
eration (please refer to the Command Definitions table).
The device will automatically generate the required inter-
nal program pulses.
The program cycle has addresses latched on the falling
edge of WE or CE, whichever occurs last, and the data
latched on the rising edge of WE or CE, whichever occurs
first. Programming is completed after the specified t
BP
cy-
Block Diagram
gram cycle has been detected, a new access for a read or
program can begin. The typical number of program and
erase cycles is in excess of 10,000 cycles.
The optional 8K bytes boot block section includes a repro-
gramming write lock out feature to provide data integrity.
The boot sector is designed to contain user secure code,
cle time. The DATA polling feature may also be used to
indicate the end of a program cycle.
BOOT BLOCK PROGRAMMING LOCKOUT: The de-
vice has one designated block that has a programming
lockout feature. This feature prevents programming of
data in the designated block once the feature has been
enabled. The size of the block is 8K bytes. This block, re-
ferred to as the boot block, can contain secure code that
is used to bring up the system. Enabling the lockout fea-
ture will allow the boot code to stay in the device while data
in the rest of the device is updated. This feature does not
have to be activated; the boot block's usage as a write
protected region is optional to the user. The address range
of the boot block is 00000H to 01FFFH.
Once the feature is enabled, the data in the boot block can
no longer be erased or programmed. Data in the main
memory block can still be changed through the regular
programming method. To activate the lockout feature, a
series of six program commands to specific addresses
with specific data must be performed. Please refer to the
Command Definitions table.
BOOT BLOCK LOCKOUT DETECTION: A software
method is available to determine if programming of the
boot block section is locked out. When the device is in the
software product identification mode (see Software Prod-
uct Identification Entry and Exit sections) a read from ad-
dress location 00002H will show if programming the boot
block is locked out. If the data on I/O0 is low, the boot
block can be programmed; if the data on I/O0 is high, the
program lockout feature has been activated and the block
cannot be programmed. The software product identifica-
tion code should be used to return to standard operation.
2
AT49F010/HF010
Temperature Under Bias................. -55
C to +125
C
Storage Temperature...................... -65
C to +150
C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to V
CC
+ 0.6V
Voltage on OE
with Respect to Ground ................... -0.6V to +13.5V
*NOTICE: Stresses beyond those listed under "Absolute Maxi-
mum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions beyond those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Absolute Maximum Ratings*
PRODUCT IDENTIFICATION: The product identification
mode identifies the device and manufacturer as Atmel. It
may be accessed by hardware or software operation. The
hardware operation mode can be used by an external pro-
grammer to identify the correct programming algorithm for
the Atmel product.
For details, see Operating Modes (for hardware operation)
or Software Product Identification. The manufacturer and
device code is the same for both modes.
DATA POLLING: The AT49F010/HF010 features DATA
polling to indicate the end of a program cycle. During a
program cycle an attempted read of the last byte loaded
will result in the complement of the loaded data on I/O7.
Once the program cycle has been completed, true data is
valid on all outputs and the next cycle may begin. DATA
polling may begin at any time during the program cycle.
Command Definition (in Hex)
Command
Sequence
Bus
Cycles
1st Bus
Cycle
2nd Bus
Cycle
3rd Bus
Cycle
4th Bus
Cycle
5th Bus
Cycle
6th Bus
Cycle
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read
1
Addr
D
OUT
Chip Erase
6
5555
AA
2AAA
55
5555
80
5555
AA
2AAA
55
5555
10
Byte
Program
4
5555
AA
2AAA
55
5555
A0
Addr
D
IN
Boot Block
Lockout
(1)
6
5555
AA
2AAA
55
5555
80
5555
AA
2AAA
55
5555
40
Product ID
Entry
3
5555
AA
2AAA
55
5555
90
Product ID
Exit
(2)
3
5555
AA
2AAA
55
5555
F0
Product ID
Exit
(2)
1
XXXX
F0
Notes: 1. The 8K byte boot sector has the address range 00000H to 01FFFH.
2. Either one of the Product ID exit commands can be used.
T O G G L E B I T : I n a d d i t i o n t o DATA p o l l i n g t h e
AT49F010/HF010 provides another method for determin-
ing the end of a program or erase cycle. During a program
or erase operation, successive attempts to read data from
the device will result in I/O6 toggling between one and
zero. Once the program cycle has completed, I/O6 will
stop toggling and valid data will be read. Examining the
toggle bit may begin at any time during a program cycle.
HARDWARE DATA PROTECTION: Hardware features
p r o t e c t a g a i n s t i n a d v e r t e n t p r o g r a m s t o t h e
AT49F010/HF010 in the following ways: (a) V
CC
sense: if
V
CC
is below 3.8V (typical), the program function is inhib-
ited. (b) Program inhibit: holding any one of OE low, CE
high or WE high inhibits program cycles. (c) Noise filter:
Pulses of less than 15 ns (typical) on the WE or CE inputs
will not initiate a program cycle.
AT49F010/HF010
3
Operating Modes
Mode
CE
OE
WE
Ai
I/O
Read
V
IL
V
IL
V
IH
Ai
D
OUT
Program
(2)
V
IL
V
IH
V
IL
Ai
D
IN
Standby/Write Inhibit
V
IH
X
(1)
X
X
High Z
Program Inhibit
X
X
V
IH
Program Inhibit
X
V
IL
X
Output Disable
X
V
IH
X
High Z
Product Identification
Hardware
V
IL
V
IL
V
IH
A1 - A16 = V
IL
, A9 = V
H
,
(3)
A0 = V
IL
Manufacturer Code
(4)
A1 - A16 = V
IL
, A9 = V
H
,
(3)
A0 = V
IH
Device Code
(4)
Software
(5)
A0 = V
IL
, A1 - A16 = V
IL
Manufacturer Code
(4)
A0 = V
IH
, A1 - A16 = V
IL
Device Code
(4)
4. Manufacturer Code: 1FH, Device Code: 17H
5. See details under Software Product Identification Entry/Exit.
Notes: 1. X can be V
IL
or V
IH
.
2. Refer to AC Programming Waveforms.
3. V
H
= 12.0V
0.5V.
DC Characteristics
Symbol
Parameter
Condition
Min
Max
Units
I
LI
Input Load Current
V
IN
= 0V to V
CC
10
A
I
LO
Output Leakage Current
V
I/O
= 0V to V
CC
10
A
I
SB1
V
CC
Standby Current CMOS
CE = V
CC
- 0.3V to V
CC
Com.
100
A
Ind.
300
A
I
SB2
V
CC
Standby Current TTL
CE = 2.0V to V
CC
3
mA
I
CC
(1)
V
CC
Active Current
f = 5 MHz; I
OUT
= 0 mA
Com.
30
mA
Ind.
40
mA
V
IL
Input Low Voltage
0.8
V
V
IH
Input High Voltage
2.0
V
V
OL
Output Low Voltage
I
OL
= 2.1 mA
.45
V
V
OH1
Output High Voltage
I
OH
= -400
A
2.4
V
V
OH2
Output High Voltage CMOS
I
OH
= -100
A; V
CC
= 4.5V
4.2
V
Note:
1. In the erase mode, I
CC
is 90 mA.
DC and AC Operating Range
AT49HF010-45 AT49HF010-55
AT49F010-70
AT49F010-90
AT49F010-12
Operating
Temperature (Case)
Com.
0
C - 70
C
0
C - 70
C
0
C - 70
C
0
C - 70
C
0
C - 70
C
Ind.
-40
C - 85
C
-40
C - 85
C
-40
C - 85
C
-40
C - 85
C
-40
C - 85
C
V
CC
Power Supply
5V
10%
5V
10%
5V
10%
5V
10%
5V
10%
4
AT49F010/HF010
AC Read Characteristics
AT49HF010-45 AT49HF010-55
AT49F010-70
AT49F010-90
AT49F010-12
Symbol
Parameter
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Units
t
ACC
Address to Output Delay
45
55
70
90
120
ns
t
CE
(1)
CE to Output Delay
45
55
70
90
120
ns
t
OE
(2)
OE to Output Delay
25
30
35
0
40
0
50
ns
t
DF
(3, 4)
CE or OE to Output Float
0
25
0
25
0
25
0
25
0
30
ns
t
OH
Output Hold from OE,
CE or Address,
whichever occurred first
0
0
0
0
0
ns
70/90/120 ns
Notes: 1. CE may be delayed up to t
ACC
- t
CE
after the address
transition without impact on t
ACC
.
2. OE may be delayed up to t
CE
- t
OE
after the falling
edge of CE without impact on t
CE
or by t
ACC
- t
OE
after an address change without impact on t
ACC
.
3. t
DF
is specified from OE or CE whichever occurs first
(C
L
= 5 pF).
4. This parameter is characterized and is not 100% tested.
AC Read Waveforms
(1, 2, 3, 4)
t
R
, t
F
< 5 ns
Input Test Waveforms and
Measurement Level
Output Test Load
45 ns / 55 ns
Pin Capacitance
(f = 1 MHz, T = 25C)
(1)
Typ
Max
Units
Conditions
C
IN
4
6
pF
V
IN
= 0V
C
OUT
8
12
pF
V
OUT
= 0V
Note:
1. This parameter is characterized and is not 100% tested.
AT49F010/HF010
5
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