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Datasheet: 28C64 (ATMEL Corporation)

64k (8k X 8) Cmos E2prom With Page Write and Software Data Protection

 

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ATMEL Corporation

Document Outline

1
Features
Fast Read Access Time 150 ns
Automatic Page Write Operation
Internal Address and Data Latches for 64 Bytes
Fast Write Cycle Times
Page Write Cycle Time: 10 ms Maximum
1 to 64-byte Page Write Operation
Low Power Dissipation
40 mA Active Current
100
A CMOS Standby Current
Hardware and Software Data Protection
DATA Polling and Toggle Bit for End of Write Detection
High Reliability CMOS Technology
Endurance: 100,000 Cycles
Data Retention: 10 Years
Single 5V
10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28C64B is a high-performance electrically-erasable and programmable read
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.
Manufactured with Atmel's advanced nonvolatile CMOS technology, the device offers
access times to 150 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 100
A.
64K (8K x 8)
Parallel
EEPROM with
Page Write and
Software Data
Protection
AT28C64B
Rev. 0270H12/99
Pin Configurations
Pin Name
Function
A0 - A12
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
DC
Don't Connect
PDIP, SOIC
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
TSOP
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OE
A11
A9
A8
NC
WE
VCC
NC
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
PLCC
Top View
Note:
PLCC package pins 1 and 17 are
DON'T CONNECT.
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
DC
I/O3
I/O4
I/O5
A7
A12
NC
DC
VCC
WE
NC
(continued)
AT28C64B
2
The AT28C64B is accessed like a Static RAM for the read
or write cycle without the need for external components.
The device contains a 64-byte page register to allow writing
of up to 64 bytes simultaneously. During a write cycle, the
addresses and 1 to 64 bytes of data are internally latched,
freeing the address and data bus for other operations. Fol-
lowing the initiation of a write cycle, the device will automat-
ically write the latched data using an internal control timer.
The end of a write cycle can be detected by DATA POLL-
ING of I/O
7
. Once the end of a write cycle has been
detected, a new access for a read or write can begin.
Atmel's AT28C64B has additional features to ensure high
quality and manufacturability. The device utilizes internal
error correction for extended endurance and improved data
retention characteristics. An optional software data protec-
tion mechanism is available to guard against inadvertent
writes. The device also includes an extra 64 bytes of
EEPROM for device identification or tracking.
Block Diagram
Absolute Maximum Ratings*
Temperature Under Bias................................ -55C to +125C
*NOTICE:
Stresses beyond those listed under "Absolute
Maximum Ratings" may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Storage Temperature ..................................... -65C to +150C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V
CC
+ 0.6V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
AT28C64B
3
Device Operation
READ: The AT28C64B is accessed like a Static RAM.
When CE and OE are low and WE is high, the data stored
at the memory location determined by the address pins is
asserted on the outputs. The outputs are put in the high-
impedance state when either CE or OE is high. This dual
line control gives designers flexibility in preventing bus con-
tention in their systems.
BYTE WRITE: A low pulse on the WE or CE input with CE
or WE low (respectively) and OE high initiates a write cycle.
The address is latched on the falling edge of CE or WE,
whichever occurs last. The data is latched by the first rising
edge of CE or WE. Once a byte write has been started, it
will automatically time itself to completion. Once a pro-
gramming operation has been initiated and for the duration
of t
W C
, a read operation will effectively be a polling
operation.
PAGE WRITE: The page write operation of the AT28C64B
allows 1 to 64 bytes of data to be written into the device
during a single internal programming period. A page write
operation is initiated in the same manner as a byte write;
after the first byte is written, it can then be followed by 1 to
63 additional bytes. Each successive byte must be loaded
within 150
s (t
BLC
) of the previous byte. If the t
BLC
limit is
exceeded, the AT28C64B will cease accepting data and
commence the internal programming operation. All bytes
during a page write operation must reside on the same
page as defined by the state of the A6 to A12 inputs. For
each WE high to low transition during the page write opera-
tion, A6 to A12 must be the same.
The A0 to A5 inputs specify which bytes within the page are
to be written. The bytes may be loaded in any order and
may be altered within the same load period. Only bytes
which are specified for writing will be written; unnecessary
cycling of other bytes within the page does not occur.
DATA POLLING: The AT28C64B features DATA Polling to
indicate the end of a write cycle. During a byte or page
write cycle an attempted read of the last byte written will
result in the complement of the written data to be presented
on I/O
7
. Once the write cycle has been completed, true
data is valid on all outputs, and the next write cycle may
begin. DATA Polling may begin at any time during the write
cycle.
TOGGLE BIT: In addition to DATA Polling, the AT28C64B
provides another method for determining the end of a write
cycle. During the write operation, successive attempts to
read data from the device will result in I/O
6
toggling
between one and zero. Once the write has completed, I/O
6
will stop toggling, and valid data will be read. Toggle bit
reading may begin at any time during the write cycle.
DATA PROTECTION: If precautions are not taken, inad-
vertent writes may occur during transitions of the host sys-
tem power supply. Atmel has incorporated both hardware
and software features that will protect the memory against
inadvertent writes.
HARDWARE DATA PROTECTION: Hardware features
protect against inadvertent writes to the AT28C64B in the
following ways: (a) V
CC
sense if V
CC
is below 3.8V (typi-
cal), the write function is inhibited; (b) V
CC
power-on delay
once V
CC
has reached 3.8V, the device will automatically
time out 5 ms (typical) before allowing a write; (c) write
inhibit holding any one of OE low, CE high, or WE high
inhibits write cycles; and (d) noise filter pulses of less
than 15 ns (typical) on the WE or CE inputs will not initiate
a write cycle.
SOFTWARE DATA PROTECTION: A software controlled
data protection feature has been implemented on the
AT28C64B. When enabled, the software data protection
(SDP), will prevent inadvertent writes. The SDP feature
may be enabled or disabled by the user; the AT28C64B is
shipped from Atmel with SDP disabled.
SDP is enabled by the user issuing a series of three write
commands in which three specific bytes of data are written
to three specific addresses (refer to the "Software Data
Protection Algorithm" diagram in this datasheet). After writ-
ing the 3-byte command sequence and waiting t
WC
, the
entire AT28C64B will be protected against inadvertent
writes. It should be noted that even after SDP is enabled,
the user may still perform a byte or page write to the
AT28C64B by preceding the data to be written by the same
3-byte command sequence used to enable SDP.
Once set, SDP remains active unless the disable command
sequence is issued. Power transitions do not disable SDP,
and SDP protects the AT28C64B during power-up and
power-down conditions. All command sequences must
conform to the page write timing specifications. The data in
the enable and disable command sequences is not actually
written into the device; their addresses may still be written
with user data in either a byte or page write operation.
After setting SDP, any attempt to write to the device without
the 3-byte command sequence will start the internal write
timers. No data will be written to the device. However, for
the duration of t
WC
, read operations will effectively be poll-
ing operations.
DEVICE IDENTIFICATION: An extra 64 bytes of EEPROM
memory are available to the user for device identification.
By raising A9 to 12V
0.5V and using address locations
1FC0H to 1FFFH, the additional bytes may be written to or
read from in the same manner as the regular memory
array.
AT28C64B
4
Notes:
1. X can be V
IL
or V
IH
.
2. Refer to the "AC Write Waveforms" diagrams in this datasheet.
3. V
H
= 12.0V
0.5V.
DC and AC Operating Range
AT28C64B-15
AT28C64B-20
AT28C64B-25
Operating
Temperature (Case)
Com.
0C - 70C
0C - 70C
0C - 70C
Ind.
-40C - 85C
-40C - 85C
-40C - 85C
V
CC
Power Supply
5V
10%
5V
10%
5V
10%
Operating Modes
Mode
CE
OE
WE
I/O
Read
V
IL
V
IL
V
IH
D
OUT
Write
(2)
V
IL
V
IH
V
IL
D
IN
Standby/Write Inhibit
V
IH
X
(1)
X
High Z
Write Inhibit
X
X
V
IH
Write Inhibit
X
V
IL
X
Output Disable
X
V
IH
X
High Z
Chip Erase
V
IL
V
H
(3)
V
IL
High
Z
DC Characteristics
Symbol
Parameter
Condition
Min
Max
Units
I
LI
Input Load Current
V
IN
= 0V to V
CC
+ 1V
10
A
I
LO
Output Leakage Current
V
I/O
= 0V to V
CC
10
A
I
SB1
V
CC
Standby Current CMOS
CE = V
CC
- 0.3V to V
CC
+ 1V
Com., Ind.
100
A
I
SB2
V
CC
Standby Current TTL
CE = 2.0V to V
CC
+ 1V
2
mA
I
CC
V
CC
Active Current
f = 5 MHz; I
OUT
= 0 mA
40
mA
V
IL
Input Low Voltage
0.8
V
V
IH
Input High Voltage
2.0
V
V
OL
Output Low Voltage
I
OL
= 2.1 mA
0.40
V
V
OH
Output High Voltage
I
OH
= -400
A
2.4
V
AT28C64B
5
AC Read Waveforms
(1)(2)(3)(4)
Notes:
1. CE may be delayed up to t
ACC
- t
CE
after the address transition without impact on t
ACC
.
2. OE may be delayed up to t
CE
- t
OE
after the falling edge of CE without impact on t
CE
or by t
ACC
- t
OE
after an address change
without impact on t
ACC
.
3. t
DF
is specified from OE or CE whichever occurs first (C
L
= 5 pF).
4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and
Measurement Level
Output Test Load
Note:
1. This parameter is characterized and is not 100% tested.
AC Read Characteristics
Symbol
Parameter
AT28C64B-15
AT28C64B-20
AT28C64B-25
Units
Min
Max
Min
Max
Min
Max
t
ACC
Address to Output Delay
150
200
250
ns
t
CE
(1)
CE to Output Delay
150
200
250
ns
t
OE
(2)
OE to Output Delay
0
70
0
80
0
100
ns
t
DF
(3)(4)
CE or OE to Output Float
0
50
0
55
0
60
ns
t
OH
Output Hold from OE, CE or
Address, whichever occurred first
0
0
0
ns
t
R
, t
F
< 5 ns
Pin Capacitance
f = 1 MHz, T = 25C
(1)
Symbol
Typ
Max
Units
Conditions
C
IN
4
6
pF
V
IN
= 0V
C
OUT
8
12
pF
V
OUT
= 0V
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