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Datasheet: S100-28 (Advanced Semiconductor)

Npn Silicon Rf Power Transistor

 

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Advanced Semiconductor
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 50 mA
33 V
BV
CES
I
C
= 100 mA
70
V
BV
EBO
I
E
= 5.0 mA
4.0
V
I
CES
V
CE
= 28 V
30
mA
h
FE
V
CE
= 5.0 V I
C
= 10 A
10
100
---
C
ob
V
CB
= 28 V
f = 1.0 MHz
---
270
---
pF
G
P



C
VSWR
V
CE
= 28 V
P
IN
= 2.5 W f = 30 MHz
16
65


:1
dB
%
---
IMD
P
OUT
= 100 W (PEP)
-32
dBc
NPN SILICON RF POWER TRANSISTOR
S100-28

DESCRIPTION:
The
ASI 100-28
is designed for HF
linear applications up to 30 MHz.

FEATURES:
P
G
= 16 dB min. at 100 W/30 MHz
High linear power output
IMD = -32 dBc max. at 100 W
(PEP)
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
20 A
V
CES
70 V
V
CEO
33 V
V
EBO
4.0 V
P
DISS
250 W @ T
C
= 25 C
T
J
-65 C to +200 C
T
STG
-65 C to +150 C



JC
0.7 C/W
PACKAGE STYLE .500 4L FLG















MINIMUM
inches / mm
.220 / 5.59
.720 / 18.28
.125 / 3.18
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H
.003 / 0.08
.007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24.89
.110 / 2.79
.175 / 4.45
1.050 / 26.67
H
I
K
J
.112x45
FULL R
C
E
B
G
D
F
A
L
.125 NOM.
.125 / 3.18
.495 / 12.57
.505 / 12.83
.280 / 7.11
E
C
B
E
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