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Datasheet: D1-28Z (Advanced Semiconductor)

Npn Silicon Rf Power Transistor

 

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Advanced Semiconductor
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 1 mA
45
V
BV
CER
I
C
= 20 mA R
BE
= 10
45
V
BV
EBO
I
E
= 1 mA
3.5
V
I
CBO
V
CE
= 28 V
250
A
h
FE
V
CE
= 5.0 V I
C
= 100 mA
15
150
---
C
ob
V
CB
= 28 V
f = 1.0 MHz
5.0
pF
P
G
C
V
CE
= 28 V
P
OUT
= 1.0 W f = 1,000 MHz
7.0
65
8.0
dB
%
NPN SILICON RF POWER TRANSISTOR
D1-28Z
DESCRIPTION:
The
D1-28Z
is Designed for General
Purpose Class C Amplifier
Applications up to 1.0 GHz.
FEATURES:
P
G
= 8.0 dB Typ. at 1 W/1,000 MHz
Emitter Ballasting for Ruggedness
OmnigoldTM Metallization System
MAXIMUM RATINGS
I
C
1.0 A
V
CB
45 V
P
DISS
7 W @ T
C
= 25
O
C
T
J
-65 to +200
O
C
T
STG
-65 to +150
O
C
JC
25
O
C/W
PACKAGE STYLE .280 4L STUD
ORDER CODE: ASI10807
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H
.245 / 6.22
.255 / 6.48
DIM
1.010 / 25.65
1.055 / 26.80
I
J
.217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24
.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D
C
B
45
A
#8-32 UNC
I
J
E
E
B
C
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