HTML datasheet archive (search documentation on electronic components) Search datasheet (1.687.043 components)
Search field

Datasheet: D10-28 (Advanced Semiconductor)

Npn Silicon Rf Power Transistor

 

Download: PDF   ZIP
Advanced Semiconductor
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 50 mA
30
V
BV
CES
I
C
= 10 mA
50
V
BV
EBO
I
E
= 5.0 mA
4.0
V
I
CBO
V
CE
= 28 V
250



A
h
FE
V
CE
= 5.0 V I
C
= 100 mA
15
150
---
C
CB
V
CB
= 28 V
f = 1.0 MHz
12
pF
P
G



C
V
CE
= 28 V
P
OUT
= 10 W f = 960 MHz
5.2
50

dB
%
NPN SILICON RF POWER TRANSISTOR
D10-28
DESCRIPTION:
The
ASI D10-28
is Designed for
General Purpose UHF Amplifier
Applications up to 1200 MHz.
FEATURES:
P
G
= 5.2 dB Typ. at 10 W/960 MHz
Emitter Ballasting for Ruggedness
OmnigoldTM Metallization System
MAXIMUM RATINGS
I
C
1.0 A
V
CEO
30 V
P
DISS
20 W @ T
C
= 25 C
T
J
-65 to +200 C
T
STG
-65 to +150 C



JC
8.8
O
C/W
PACKAGE STYLE .280 4L STUD


MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H
.245 / 6.22
.255 / 6.48
DIM
1.010 / 25.65
1.055 / 26.80
I
J
.217 / 5.51
.220 / 5.59
K
.175 / 4.45
.285 / 7.24
.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D
C
B
45
A
#8-32 UNC
I
J
E
E
B
C
© 2017 • ICSheet
Contact form
Main page