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Datasheet: IAM-82008-TR1 (Agilent Technologies)

Silicon Bipolar MMIC 5 GHz Active Double Balanced Mixer/ IF Amp

 

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Agilent Technologies

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7-127
IAM-82008
Silicon Bipolar MMIC 5 GHz
Active Double Balanced Mixer/
IF Amp
Technical Data
Features
RF-IF Conversion Gain:
15 dB from 0.05-5 GHz
IF Conversion Gain from DC
to 2 GHz
IF Output P
1dB
:
+8 dBm Typical
Single Polarity Bias Supply:
V
CC
= 7 to 13 V
Load Insensitive
Performance
Conversion Gain Flat over
Temperature
low LO power. Typical
applications include frequency
down-conversion, up-conversion,
modulation, demodulation, and
phase detection. Markets include
fiber-optics, GPS satellite
navigation, mobile radio, and
communications transmitters and
receivers.
The IAM series of Gilbert
multiplier-based frequency
converters is fabricated using
Hewlett Packard's 10 GHz f
T
25
GHz f
MAX
ISOSATTM-1 silicon
bipolar process. This process uses
nitride self-alignment, submicrom-
eter lithography, trench isolation,
ion implantation, gold
metallization, and polyimide inter-
metal dielectric and scratch
protection to achieve excellent
performance, uniformity and
reliability.
Plastic SO-8 Package
Functional Block Diagram
and Pin Configuration
Description
Hewlett-Packard's IAM-82008 is a
complete moderate-power double-
balanced active mixer housed in a
miniature low cost surface mount
package. It is designed for narrow
or wide bandwidth commercial
and industrial applications having
RF inputs up to 5 GHz. Operation
of RF and LO frequencies below
50 MHz can be achieved using
optional external capacitors to
ground. The IAM-82008 is
particularly well suited for
applications that require load-
insensitive conversion gain and
good spurious signal suppression
and moderate dynamic range with
Pin Description
1 IF Output
8 RF Ground (optional)
2 V
ee
, AC Ground
7 V
CC
3 V
ee
, AC Ground Thermal Contact
6 LO Ground (optional)
4 RF Input
5 LO Input
1
2
3
4
5
6
7
8
5965-9112E
7-128
Absolute Maximum Ratings
[1]
(T
A
= 25
C)
Symbol
Parameter
Units
Value
V
d
Device Voltage
V
15
P
t
Total Device Dissipation
[2]
mW
1200
P
in RF
RF Input Power
dBm
+14
P
in LO
LO Input Power
dBm
+14
T
j
Junction Temperature
C
150
T
STG
Storage Temperature
C
-65 to +150
jc
Thermal Resistance
C/W
92
Junction to Case
[3]
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to
this device.
2. Derate at 10.9 mW/
C for T
PIN 3
> 40
C.
3. T
j
= 150
C.
IAM-82008 Electrical Specifications
V
CC
= 10 V, Z
O
= 50
, LO = 0 dBm, RF = -20 dBm, T
A
= 25
C
Symbol
Parameter
Units
Minimum
Typical
Maximum
G
C
Conversion Gain, RF = 2 GHz,
dB
13
15
17
LO = 1.75 GHz
f
3 dB
RF
RF Bandwidth (G
C
3 dB down),
IF = 250 MHz
GHz
5.5
f
3 dB
IF
IF Bandwidth (G
C
3 dB down),
LO = 2 GHz
GHz
0.5
P
1 dB
Output Power at 1 dB Gain Compression,
RF = 2 GHz, LO = 1.75 GHz
dBm
8
IP
3
Third Order Inpercept Point,
RF = 2 GHz, LO = 1.75 GHz
dBm
18
NF
SSB Noise Figure
dB
19
VSWR
RF Port VSWR
1.5:1
LO Port VSWR
2.0:1
IF Port VSWR
2.5:1
RF
if
RF Feedthrough at IF Port
dBc
-30
LO
if
LO Leakage at IF Port
dBm
-15
LO
rf
LO Leakage at RF Port
dBm
-22
I
CC
Supply Current
mA
40
55
65
Note:
1. The recommended operating voltage range for this device is 7 to 13 V. Typical performance as a function of voltage is shown on the
following page.
Figure 1. Typical RF to IF Conversion
Gain vs. RF Frequency, T
A
= 25
C, Low
Side LO.
20
15
5
0.1
1.0
10
RF FREQUENCY (GHz)
10
0
IF = 70 MHz
IF = 2 GHz
0.2
0.5
2.0
5.0
G (dB)
C
7-129
Notes:
1. No external baluns are required.
2. Good heatsinking required on Pin 3 for
specified performance.
Figure 2. IAM-82008 Typical Biasing Configuration.
Figure 5. RF, LO, and IF Port VSWR
vs. Frequency, T
A
= 25
C, V
CC
= 10 V.
Figure 6. Typical Conversion Gain, IF
P
1 dB
, and I
CC
Current vs. Case
Temperature, T
A
= 25
C, V
CC
= 10 V,
RF: -20 dBm at 2 GHz, LO: 0 dBm at
1.75 GHz.
Figure 3. Typical Conversion Gain, IF
P
1 dB
, and I
CC
Current vs. V
CC
Bias
Voltage, T
A
= 25
C, RF: -20 dBm at 2
GHz, LO: 0 dBm at 1.75 GHz.
Figure 4. Typical RF to IF Conversion
Gain vs. IF Frequency, T
A
= 25
C, V
CC
= 10 V, LO: 0 dBm at 2 GHz.
Figure 7. Typical RF to IF Conversion
Gain vs. LO Power, T
A
= 25
C, V
CC
= 10
V, RF: -10 dBm at 2 GHz, LO: 0 dBm at
1.75 GHz.
Figure 8. Typical RF Feedthrough
Relative to IF Carrier, LO to RF and
LO to IF Leakage vs. Frequency, T
A
=
25
C, V
CC
= 10 V, RF: -20 dBm at
2 GHz, LO: 0 dBm at 1.75 GHz.
Figure 9. Harmonic Intermodulation
Suppression (dB Below Desired
Output) RF at 1 GHz, LO at 0.752
GHz, IF at 0.248 GHz.
0
21
40
73
>75
>75
1
12
0
51
60
>75
>75
2
6
22
41
>75
>75
>75
3
24
18
40
74
>75
>75
4
22
33
52
75
>75
>75
5
41
36
55
>75
>75
>75
0
1
2
3
4
5
HARMONIC RF ORDER
Xmn = Pif P(m*rf-n*lo)
HARMONIC LO ORDER
20
20
15
15
10
10
5
5
0
0
100
75
50
25
0
0
4
8
12
16
20
IF P 1dB, dBm
G (dB)
C
G
C
I
CC
P
1dB
I (mA)
CC
V (V)
CC
20
12
.01
0.1
2.0
IF FREQUENCY, RF-LO (GHz)
16
0
1.0
8
4
LO = 2 GHz
G (dB)
C
HIGH SIDE LO =
LOW SIDE LO =
4:1
3:1
2:1
1:1
0.1
1.0
10
FREQUENCY (GHz)
VSWR
LO
IF
RF
RF
LO
IF
15
20
15
10
5
0
-5
10
5
0
80
70
60
50
40
-55
-25
25
85
125
0
TEMPERATURE (C)
IF P 1dB (dBm)
G (dB)
C
I (mA)
CC
G
C
I
CC
1dB
P
16
14
12
10
-10
-5
0
5
10
LO POWER (dBm)
G (dB)
C
0
-10
-20
-30
-40
-50
-60
0.1
1.0
10
FREQUENCY (GHz)
RF TO IF (dBc)
LO TO RF AND IF (dBm)
RF to IF
LO to IF
LO to RF
LO to RF
RF to IF
LO to IF
1
2
3
4
5
6
8
7
OPTIONAL LOW
FREQUENCIES
RF GROUND
V = 10 V
OPTIONAL LOW
FREQUENCIES
LO GROUND
LO INPUT
IF OUTPUT
V = 0 V
RF INPUT
PIN 3 IS ALSO
HEATSINK CONTACT
ee
cc
C
BLOCK
C
BLOCK
C
BLOCK
C
BLOCK
C
BLOCK
7-130
Part Number Ordering Information
Part Number
No. of Devices
Container
IAM-82008-TR1
1000
7" Reel
IAM-82008-STR
10
Strip
Package Dimensions
SO-8 Plastic Package
O
5.84/6.20
(.230/.244)
3.80/4.00
(.1497/.1574)
Pin 1
1.27 (.050)
6x
4.72/5.00
(.186/.197)
0.10/0.25
(.004/.0098)
0.33/0.51
(.013/.020) 8X
1.35/1.75
(.0532/.0688)
0.19/0.25
(.0075/.0098)
0.41/1.27
(.016/.050)
0
/8
0.38
0.10
(.015
.004) x 45
0.10 (.004)
Note:
1. Dimensions are shown in millimeters (inches).
M820
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