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Datasheet: 596288565013A (Analog Devices)

Very Low Noise Quad Operational Amplifier

 

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Analog Devices

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REV. B
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
a
OP470
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002
Very Low Noise Quad
Operational Amplifier
FEATURES
Very Low-Noise, 5 nV/
÷Hz @ 1 kHz Max
Excellent Input Offset Voltage, 0.4 mV Max
Low Offset Voltage Drift, 2 V/ C Max
Very High Gain, 1000 V/mV Min
Outstanding CMR, 110 dB Min
Slew Rate, 2 V/ s Typ
Gain-Bandwidth Product, 6 MHz Typ
Industry Standard Quad Pinouts
Available in Die Form
GENERAL DESCRIPTION
The OP470 is a high-performance monolithic quad operational
amplifier with exceptionally low voltage noise, 5 nV/
÷Hz at
1 kHz max, offering comparable performance to ADI's industry
standard OP27.
The OP470 features an input offset voltage below 0.4 mV,
excellent for a quad op amp, and an offset drift under 2
mV/C,
guaranteed over the full military temperature range. Open loop
gain of the OP470 is over 1,000,000 into a 10 k
W load ensuring
excellent gain accuracy and linearity, even in high gain applica-
tions. Input bias current is under 25 nA, which reduces errors
due to signal source resistance. The OP470's CMR of over 110
dB and PSRR of less than 1.8
mV/V significantly reduce errors
due to ground noise and power supply fluctuations. Power
consumption of the quad OP470 is half that of four OP27s, a
significant advantage for power conscious applications. The
OP470 is unity-gain stable with a gain bandwidth product of
6 MHz and a slew rate of 2 V/
ms.
PIN CONNECTIONS
14-Lead Hermetic DIP
(Y-Suffix)
14-Lead Plastic DIP
(P-Suffix)
14
13
12
11
10
9
8
1
2
3
4
5
6
7
OUT A
­IN A
+IN A
V+
+IN B
­IN B
OUT B
OUT D
­IN D
+IN D
+IN C
­IN C
OUT C
OP470
16-Lead SOIC Package
(S-Suffix)
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
NC = NO CONNECT
OUT A
OUT D
OP470
­IN A
­IN D
+IN A
+IN D
V+
+IN B
+IN C
­IN B
­IN C
OUT B
OUT C
NC
NC
SIMPLIFIED SCHEMATIC
­IN
+IN
BIAS
V+
The OP470 offers excellent amplifier matching which is impor-
tant for applications such as multiple gain blocks, low noise
instrumentation amplifiers, quad buffers, and low noise active
filters.
The OP470 conforms to the industry standard 14-lead DIP
pinout. It is pin compatible with the LM148/149, HA4741,
HA5104, and RM4156 quad op amps and can be used to up-
grade systems using these devices.
For higher speed applications, the OP471, with a slew rate of 8
V/
ms, is recommended.
REV. B
­2­
OP470­SPECIFICATIONS
OP470A/E
OP470F
OP470G
Parameter
Symbol
Conditions
Min
Typ Max
Min Typ Max
Min Typ Max
Unit
INPUT OFFSET
VOLTAGE
V
OS
0.1
0.4
0.2
0.8
0.4
1.0
mV
INPUT OFFSET
CURRENT
I
OS
V
CM
= 0 V
3
10
6
20
12
30
nA
INPUT BIAS
CURRENT
I
B
V
CM
= 0 V
6
25
15
50
25
60
nA
INPUT NOISE
VOLTAGE
e
np-p
0.1 Hz to 10 Hz
80
200
80
200
80
200
nV p-p
(Note 1)
INPUT NOISE
f
O
= 10 Hz
3.8
6.5
3.8
6.5
3.8
6.5
Voltage Density
e
n
f
O
= 100 Hz
3.3
5.5
3.3
5.5
3.3
5.5
nV
÷Hz
f
O
=
1 kHz
3.2
5.0
3.2
5.0
3.2
5.0
(Note 2)
INPUT NOISE
f
O
= 10 Hz
1.7
1.7
1.7
Current Density
i
n
f
O
= 100 Hz
0.7
0.7
0 7
pA
÷Hz
f
O
= 1 kHz
0.4
0.4
0.4
LARGE-SIGNAL
V =
±10 V
Voltage Gain
A
VO
R
L
= 10 k
W
1000 2300
800
1700
800
1700
V/mV
R
L
= 2 k
W
500
1200
400
900
400
900
INPUT VOLTAGE
RANGE
IVR
(Note 3)
±11 ±12
±11 ±12
±11 ±12
V
OUTPUT VOLTAGE
SWING
V
O
R
L
2 k
W
±12 ±13
±12 ±13
±12 ±13
V
COMMON-MODE
REJECTION
CMR
V
CM
=
±11 V
110
125
100
120
100
120
dB
POWER SUPPLY
REJECTION RATIO
PSRR
V
S
=
±4.5 V to ±18 V
0.56 1.8
1.0
5.6
1.0
5.6
mV/V
SLEW RATE
SR
1.4
2
1.4
2
1.4
2
V/
ms
SUPPLY CURRENT
(All Amplifiers)
I
SY
No Load
9
11
9
11
9
11
mA
GAIN BANDWIDTH
PRODUCT
GBW
A
V
= 10
6
6
6
MHz
CHANNEL
SEPARATION
CS
V
O
= 20 V p-p
125
155
125
155
125
155
dB
f
O
= 10 Hz (Note 1)
INPUT
CAPACITANCE
C
IN
2
2
2
pF
INPUT RESISTANCE
R
IN
0.4
0.4
0.4
M
W
Differential-Mode
INPUT RESISTANCE
Common-Mode
R
INCM
11
11
11
G
W
A
V
= 1
SETTLING TIME
t
S
to 0.1%
5.5
5.5
5.5
ms
to 0.01 %
6.0
6.0
6.0
NOTES
1
Guaranteed but not 100% tested
2
Sample tested
3
Guaranteed by CMR test
ELECTRICAL CHARACTERISTICS
(at V
S
= 15 V, T
A
= 25 C, unless otherwise noted.)
REV. B
­3­
OP470
OP470A
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
INPUT OFFSET VOLTAGE
V
OS
0.14
0.6
mV
AVERAGE INPUT
Offset Voltage Drift
TCV
OS
0.4
2
mV/C
INPUT OFFSET CURRENT
I
OS
V
CM
= 0 V
5
20
nA
INPUT BIAS CURRENT
I
B
V
CM
= 0 V
15
20
nA
LARGE-SIGNAL
V
O
=
±10 V
Voltage Gain
A
VO
R
L
= 10 k
W
750
1600
V/mV
R
L
= 2 k
W
400
800
INPUT VOLTAGE RANGE
*
IVR
±11
±12
V
OUTPUT VOLTAGE SWING
V
O
R
L
2 k
W
±12
±13
V
COMMON-MODE
REJECTION
CMR
V
CM
=
±11 V
100
120
dB
POWER SUPPLY
REJECTION RATIO
PSRR
V
S
=
±4.5 V to ±18 V
1.0
5.6
mV/V
SUPPLY CURRENT
(All Amplifiers)
I
SY
No Load
--
9.2
11
mA
*
Guaranteed by CMR test
(at V
S
= 15 V, ­55 C
£
T
A
£ 125 C for OP470A, unless otherwise noted.)
ELECTRICAL CHARACTERISTICS
OP470E
OP470F
OP470G
Parameter
Symbol
Conditions
Min
Typ Max
Min Typ Max
Min Typ Max
Unit
INPUT OFFSET
VOLTAGE
V
OS
0.12 0.5
0.24 1.0
0.5
1.5
mV
AVERAGE INPUT
Offset Voltage Drift
TCV
OS
0.4
2
0.6
4
2
mV/C
INPUT OFFSET
CURRENT
I
OS
V
CM
= 0 V
4
20
7
40
20
50
nA
INPUT BIAS
CURRENT
I
B
V
CM
= 0 V
11
50
20
70
40
75
nA
LARGE-SIGNAL
V
O
=
±10 V
Voltage Gain
A
VO
R
L
= 10 k
W
800
1800
600
1400
600
1500
V/mV
R
L
= 2 k
W
400
900
300
700
300
800
INPUT VOLTAGE
RANGE
*
IVR
±11 ±12
±11 ±12
±11 ±12
V
OUTPUT VOLTAGE
SWING
V
O
R
L
2 k
W
±12 ±13
±12 ±13
±12 ±13
V
COMMON-MODE
REJECTION
CMR
V
CM
=
±11 V
100
120
90
115
90
110
dB
POWER SUPPLY
REJECTION RATIO
PSRR
V
S
=
±4.5 V to ±18 V
0.7
5.6
1.8
10
1.8
10
mV/V
SUPPLY CURRENT
(All Amplifiers)
I
SY
No Load
--
9.2
11
--
9.2
11
--
9.3
11
mA
*
Guaranteed by CMR test
(at V
S
= 15 V, ­25 C
£
T
A
£ 85 C for OP470E/OP470EF, ­40 C
£
T
A
£ 85 C for OP470G,
unless otherwise noted.)
ELECTRICAL CHARACTERISTICS
REV. B
­4­
OP470­SPECIFICATIONS
OP470GBC
Parameter
Symbol
Conditions
Limit
Unit
INPUT OFFSET VOLTAGE
V
OS
0.8
mV Max
INPUT OFFSET CURRENT
I
OS
V
CM
= 0 V
20
nA Max
INPUT BIAS CURRENT
I
B
V
CM
= 0 V
50
nA Min
LARGE-SIGNAL
V
O
=
±10 V
Voltage Gain
A
VO
R
L
= 10 k
W
800
V/mV Min
R
L
= 2 k
W
400
INPUT VOLTAGE RANGE
*
IVR
±11
V Min
OUTPUT VOLTAGE SWING
V
O
R
L
2 k
W
±12
V Min
COMMON-MODE
REJECTION
CMR
V
CM
=
±11 V
100
dB
POWER SUPPLY
REJECTION RATIO
PSRR
V
S
=
±4.5 V to ±18 V
5.6
mV/V Max
SUPPLY CURRENT
(All Amplifiers)
I
SY
No Load
11
mA Max
NOTE
*
Guaranteed by CMR test
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaran-
teed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
(at V
S
= 15 V, 25 C, unless otherwise noted.)
WAFER TEST LIMITS
REV. B
OP470
­5­
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±18 V
Differential Input Voltage
2
. . . . . . . . . . . . . . . . . . . . . .
±1.0 V
Differential Input Current
2
. . . . . . . . . . . . . . . . . . . .
±25 mA
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . Supply Voltage
Output Short-Circuit Duration . . . . . . . . . . . . . . . Continuous
Storage Temperature Range
P, Y Package . . . . . . . . . . . . . . . . . . . . . . ­65
C to +150C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300
C
Junction Temperature (T
j
) . . . . . . . . . . . . . ­65
C to +150C
Operating Temperature Range
OP470A . . . . . . . . . . . . . . . . . . . . . . . . . ­55
C to +125C
OP470E, OP470F . . . . . . . . . . . . . . . . . . . ­25
C to +85C
OP470G . . . . . . . . . . . . . . . . . . . . . . . . . . ­40
C to +85C
­IN A
OUT A
OUT D
­IN D
+IN A
V+
+IN B
­IN B
OUT B
OUT C
­IN C +IN C
+IN D
DIE SIZE 0.163
0.106 INCH, 17,278 SQ. mm
(4.14
2.69 mm, 11.14 SQ. mm)
Figure 1. Dice Characteristics
Package Type
JA
3
JC
Unit
14-Lead Hermetic DIP(Y)
94
10
C/W
14-Lead Plastic DIP(P)
76
33
C/W
16-Lead SOIC (S)
88
23
C/W
NOTES
1
Absolute Maximum Ratings apply to both DICE and packaged parts, unless
otherwise noted.
2
The OP470's inputs are protected by back-to-back diodes. Current limiting
resistors are not used in order to achieve low noise performance. If differential
voltage exceeds
±1.0 V, the input current should be limited to ±25 mA.
3
JA
is specified for worst case mounting conditions, i.e.,
JA
is specified for device
in socket for TO, CerDIP, PDIP, packages;
JA
is specified for device soldered to
printed circuit board for SOIC packages.
ORDERING GUIDE
Package Options
T
A
= 25
C
Operating
V
OS
max
Cerdip
Temperature
( V)
14-Pin
Plastic
Range
400
MIL
400
OP470AY
*
MIL
400
OP470EY
IND
800
OP470FY
*
IND
1000
OP470GP
XIND
1000
OP470GS
XIND
*Not for new design; obsolete April 2002.
For military processed devices, please refer to the standard
Microcircuit Drawing (SMD) available at
www.dscc.dla.mil/programs/milspec/default.asp
SMD Part Number
ADI Equivalent
59628856501CA
OP470AYMDA
596288565012A
OP470ARCMDA
596288565013A
*
OP470ATCMDA
*Not for new designs; obsolete April 2002.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the OP470 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
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