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Datasheet: AP9972GR (Advanced Power Electronics Corp.)

N-channel Enhancement Mode Power Mosfet

 

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Advanced Power Electronics Corp.
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low Gate Charge
BV
DSS
60V
Single Drive Requirement
R
DS(ON)
18m
Surface Mount Package
I
D
60A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
C
=25
A
I
D
@T
C
=100
A
I
DM
A
P
D
@T
C
=25
W
W/
I
AR
A
T
STG
T
J
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
1.4
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
89
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.7
Avalanche Current
3
Continuous Drain Current, V
GS
@ 10V
38
Pulsed Drain Current
1
230
Gate-Source Voltage
▒25
Continuous Drain Current, V
GS
@ 10V
60
Parameter
Rating
Drain-Source Voltage
60
Pb Free Plating Product
200218051
AP9972GR
30
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
TO-262(R)
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
60
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.06
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=35A
-
-
18
m
V
GS
=4.5V, I
D
=25A
-
-
22
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=35A
-
55
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=60V, V
GS
=0V
-
-
10
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=48V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=▒25V
-
-
▒100
nA
Q
g
Total Gate Charge
2
I
D
=35A
-
32
51
nC
Q
gs
Gate-Source Charge
V
DS
=48V
-
8
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
20
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=30V
-
11
-
ns
t
r
Rise Time
I
D
=35A
-
58
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
45
-
ns
t
f
Fall Time
R
D
=0.86
-
80
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
3170 5070
pF
C
oss
Output Capacitance
V
DS
=25V
-
280
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
R
g
Gate Resistance
f=1.0MHz
-
1.7
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=35A, V
GS
=0V
-
-
1.2
V
t
rr
Reverse Recovery Time
I
S
=35A,
V
GS
=0
V
,
-
50
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/Ás
-
48
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Starting T
j
=25
o
C , V
DD
=30V , L=1mH , R
G
=25
, I
AS
=30A.
AP9972GR
AP9972GR
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
50
100
150
0
2
4
6
8
10
12
14
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
C
= 150
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
14
16
18
20
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
DS(ON)
(m



)
I
D
= 25 A
T
C
=25
o
C
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(ON)
I
D
=35A
V
G
=10V
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0.2
0.7
1.2
1.7
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
V
GS(t
h)
(V
)
0
50
100
150
200
0
2
4
6
8
10
12
14
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
C
=25
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
AP9972GR
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
100
1000
10000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0
2
4
6
8
10
12
0
20
40
60
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
Voltage
(V)
V
DS
=48V
V
DS
=38V
V
DS
=30V
I
D
= 35 A
0
20
40
60
80
100
0
2
4
6
8
V
GS
, Gate-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
The
r
mal Re
sponse
(
R
thjc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
T
C
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
DC
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