HTML datasheet archive (search documentation on electronic components) Search datasheet (1.687.043 components)
Search field

Datasheet: AP9934GM (Advanced Power Electronics Corp.)

2n and 2p-channel Enhancement Mode Power Mosfet

 

Download: PDF   ZIP
Advanced Power Electronics Corp.
Advanced Power
2N AND 2P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
Simple Drive Requirement
N-CH BV
DSS
35V
Low On-resistance
R
DS(ON)
48m
Full Bridge Application on
I
D
4.3A
LCD Monitor Inverter
P-CH BV
DSS
-35V
R
DS(ON)
72m
Description
I
D
-3.6A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel
P-channel
V
DS
Drain-Source Voltage
35
-35
V
V
GS
Gate-Source Voltage
▒ 20
▒ 20
V
I
D
@T
A
=25
Continuous Drain Current
3
4.3
-3.6
A
I
D
@T
A
=70
Continuous Drain Current
3
3.4
-2.8
A
I
DM
Pulsed Drain Current
1
20
-20
A
P
D
@T
A
=25
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/
T
STG
Storage Temperature Range
-55 to 150
T
J
Operating Junction Temperature Range
-55 to 150
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
90
/W
Data and specifications subject to change without notice
Parameter
200920041
AP9934GM
Thermal Data
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
N1G
N1D/P1D
N1S/N2S
N2G
P1G
P1S/P2S
N2D/P2D
P2G
SO-8
N1G
N1S
P1G
P1S
P1N1D
N2G
N2S
P2G
P2S
P2N2D
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
35
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.03
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=4A
-
-
48
m
V
GS
=4.5V, I
D
=3A
-
-
70
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=4A
-
8
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V, V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=▒20V
-
-
▒100
nA
Q
g
Total Gate Charge
2
I
D
=4A
-
6
10
nC
Q
gs
Gate-Source Charge
V
DS
=28V
-
2
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
3
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
6
-
ns
t
r
Rise Time
I
D
=1A
-
5
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
14
-
ns
t
f
Fall Time
R
D
=15
-
4
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
490
780
pF
C
oss
Output Capacitance
V
DS
=25V
-
130
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=1.2A, V
GS
=0V
-
-
1.2
V
t
rr
Reverse Recovery Time
I
S
=4A, V
GS
=0V
-
18
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/Ás
-
11
-
nC
AP9934GM
AP9934GM
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-35
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
,I
D
=-1mA
-
-0.02
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-3A
-
-
72
m
V
GS
=-4.5V, I
D
=-2A
-
-
100
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-1
-
-3
V
g
fs
Forward Transconductance
V
DS
=-10V, I
D
=-3A
-
6
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-30V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-24V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=▒20V
-
-
▒100
nA
Q
g
Total Gate Charge
2
I
D
=-3A
-
6
10
nC
Q
gs
Gate-Source Charge
V
DS
=-28V
-
1
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
3
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-15V
-
7
-
ns
t
r
Rise Time
I
D
=-1A
-
5
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,V
GS
=-10V
-
19
-
ns
t
f
Fall Time
R
D
=15
-
4
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
420
1100
pF
C
oss
Output Capacitance
V
DS
=-25V
-
140
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=-1.2A, V
GS
=0V
-
-
-1.2
V
t
rr
Reverse Recovery Time
I
S
=-3A, V
GS
=0V
-
20
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=-100A/Ás
-
16
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board , t <10sec ; 186
/W when mounted on Min. copper pad.
N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP9934GM
0
3
6
9
12
15
18
21
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
=25
o
C
V
G
=2.5V
10V
7.0V
5.0V
4.5V
0
3
6
9
12
15
18
21
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dr
a
i
n C
u
r
r
e
nt
(A
)
T
A
= 150
o
C
10V
7.0V
5.0V
4.5V
V
G
=2.5V
30
40
50
60
70
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
DS
(
ON)
(m



)
I
D
=3A
T
A
=25
o
C
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
r
m
aliz
ed R
DS
(
ON)
I
D
=4A
V
G
=10V
0
0.5
1
1.5
2
-50
0
50
100
150
T
j
,Junction Temperature (
o
C)
N
o
r
m
aliz
ed V
GS
(
t
h
)
(V
)
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
AP9934GM
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
0
2
4
6
8
10
12
0
3
6
9
12
Q
G
, Total Gate Charge (nC)
V
GS
, G
a
te to S
o
u
r
ce Voltage (
V
)
I
D
= 4 A
V
DS
= 2 8 V
10
100
1000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 186
/W
t
T
0.02
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
100us
1ms
10ms
100ms
1s
DC
T
A
=25
o
C
Single Pulse
© 2020 • ICSheet
Contact form
Main page