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Datasheet: AP9928GEO (Advanced Power Electronics Corp.)

N-channel Enhancement Mode Power Mosfet

 

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Advanced Power Electronics Corp.
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Low on-resistance
BV
DSS
20V
Capable of 2.5V gate drive
R
DS(ON)
23m
Optimal DC/DC battery application
I
D
5A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
125
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
1
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.008
Drain Current
3
, V
GS
@ 4.5V
3.5
Pulsed Drain Current
1
25
Gate-Source Voltage
12
Drain Current
3
, V
GS
@ 4.5V
5
Parameter
Rating
Drain-Source Voltage
20
200206031
AP9928GEO
Pb Free Plating Product
S1
G1
D1
S2
G2
D2
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D2
S2
S2
G2
D1
S1
S1
G1
TSSOP-8
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.02
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V, I
D
=5A
-
-
23
m
V
GS
=2.5V, I
D
=2A
-
-
29
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
0.5
-
-
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=5A
-
21
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=20V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=20V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=12V
-
-
10
uA
Q
g
Total Gate Charge
2
I
D
=5A
-
15.9
-
nC
Q
gs
Gate-Source Charge
V
DS
=10V
-
1.5
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
7.4
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=10V
-
6.2
-
ns
t
r
Rise Time
I
D
=1A
-
9
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=4.5V
-
30
-
ns
t
f
Fall Time
R
D
=10
-
11
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
530
-
pF
C
oss
Output Capacitance
V
DS
=20V
-
245
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
125
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V,V
S
=1.2V
-
-
0.83
A
V
SD
Forward On Voltage
2
T
j
=25
,I
S
=5A,V
GS
=0V
-
-
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of
FR4 board ; 208
/W when mounted on Min. copper pad.
AP9928GEO
AP9928GEO
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
5
35
65
95
1
2
3
4
5
V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m



)
I
D
= 5A
T
A
=25
o
C
0
5
10
15
20
25
30
35
40
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
A
=25
o
C
4.5V
3.5V
3.0V
2.5V
V
G
=2.0V
0
5
10
15
20
25
30
35
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
A
=150
o
C
4.5V
3.5V
3.0V
2.5V
V
G
=2.0V
0.3
0.7
1.1
1.5
1.9
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(
ON)
I
D
= 5A
V
G
= 4.5V
0.01
0.1
1
10
0.2
0.5
0.8
1.1
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=150
o
C
0
0.4
0.8
1.2
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
V
GS(
t
h)
(V
)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP9928GEO
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A)
T
A
=25
o
C
Single Pulse
100us
1ms
10ms
100ms

1s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
ja
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=208
o
C/W
t
T
0.02
0.05
0.1
0.2
Duty factor = 0.5
Single Pulse
0.01
0
2
4
6
8
0
5
10
15
20
25
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
I
D
= 5A
V
DS
=10V
V
DS
=15V
V
DS
=20V
10
100
1000
1
7
13
19
25
V
DS
, Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
5V
Q
GS
Q
GD
Q
G
Charge
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