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Datasheet: AP2301GN (Advanced Power Electronics Corp.)

P-channel Enhancement Mode Power Mosfet

 

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Advanced Power Electronics Corp.
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Simple Drive Requirement
BV
DSS
-20V
Small Package Outline
R
DS(ON)
130m
Surface Mount Device
I
D
- 2.6A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
90
/W
Data and specifications subject to change without notice
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
-55 to 150
Linear Derating Factor
1.38
-55 to 150
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Continuous Drain Current
3
-2.1
Pulsed Drain Current
1,2
-10
200407043
AP2301GN
Rating
- 20
12
-2.6
0.01
Pb Free Plating Product
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G
D
S
D
G
S
SOT-23
AP2301GN
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-20
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
-0.1
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-5V, I
D
=-2.8A
-
-
130
m
V
GS
=-2.8V, I
D
=-2.0A
-
-
190
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-0.5
-
-
V
g
fs
Forward Transconductance
V
DS
=-5V, I
D
=-2.8A
-
4.4
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-20V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-16V, V
GS
=0V
-
-
-10
uA
I
GSS
Gate-Source Leakage
V
GS
=12V
-
-
nA
Q
g
Total Gate Charge
2
I
D
=-2.8A
-
5.2
10
nC
Q
gs
Gate-Source Charge
V
DS
=-6V
-
1.36
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-5V
-
0.6
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-15V
-
5.2
-
ns
t
r
Rise Time
I
D
=-1A
-
9.7
-
ns
t
d(off)
Turn-off Delay Time
R
G
=6
,
V
GS
=-10V
-
19
-
ns
t
f
Fall Time
R
D
=15
-
29
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
295
-
pF
C
oss
Output Capacitance
V
DS
=-6V
-
170
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=-1.2V
-
-
-1
A
I
SM
Pulsed Source Current ( Body Diode )
1
-
-
-10
A
V
SD
Forward On Voltage
2
T
j
=25
, I
S
=-1.6A, V
GS
=0V
-
-
-1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 270
/W when mounted on min. copper pad.
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP2301GN
0
2
4
6
8
10
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain
Cu
rre
n
t
(A)
T
A
=25
o
C
V
GS
= -5V
V
GS
= -4V
V
GS
= -3V
V
GS
= -2V
0
2
4
6
8
10
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain
Cu
rre
n
t
(A)
T
A
=150
o
C
V
GS
= -5V
V
GS
= -4V
V
GS
= -3V
V
GS
= -2V
0
200
400
600
800
0
2
4
6
8
10
-V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(



)
I
D
= -2A
T
A
=25
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(
ON)
I
D
= -2.8A
V
GS
= -5V
0
0
1
10
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V
SD
, Source-to-Drain Voltage (V)
-I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0.0
0.5
1.0
1.5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
-V
GS(
t
h)
(V
)
AP2301GN
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 270
/W
t
T
Single Pulse
0
1
2
3
4
5
0
2
4
6
Q
G
, Total Gate Charge (nC)
-V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
I
D
=-2.8A
V
DS
=-6V
10
100
1000
1
3
5
7
9
11
13
-V
DS
, Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
Q
GS
Q
GD
Q
G
Charge
-5V
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-I
D
(A)
1ms
10ms
100ms
1s
DC
T
A
=25 C
Single Pulse
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