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Datasheet: AP20N03S (Advanced Power Electronics Corp.)

N-CHANNEL ENHANCEMENT MODE

 

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Advanced Power Electronics Corp.
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Dynamic dv/dt Rating
BV
DSS
30V
Repetitive Avalanche Rated
R
DS(ON)
52m
Fast Switching
I
D
20A
Simple Drive Requirement
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
C
=25
A
I
D
@T
C
=100
A
I
DM
A
P
D
@T
C
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-case
Thermal Resistance Junction-case
Max.
4.0
/W
Rthj-amb
Thermal Resistance Junction-ambient
Max.
62
/W
Data & specifications subject to change without notice
201024032
Thermal Data
Parameter
Pulsed Drain Current
1
60
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.25
Storage Temperature Range
Total Power Dissipation
31
-55 to 150
Continuous Drain Current, V
GS
@ 10V
20
Continuous Drain Current, V
GS
@ 10V
13
Drain-Source Voltage
30
Gate-Source Voltage
AP20N03S/P
Parameter
Rating
20
G
D
S
G D
S
TO-263(S)
G
D
S
TO-220(P)
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP20N03P) is available for low-profile applications.
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.037
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=10A
-
-
52
m
V
GS
=4.5V, I
D
=8A
-
-
85
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=10A
-
3
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=24V, V
GS
=0V
-
-
100
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
2
I
D
=10A
-
6.1
-
nC
Q
gs
Gate-Source Charge
V
DS
=24V
-
1.4
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=5V
-
4
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
4.9
-
ns
t
r
Rise Time
I
D
=20A
-
29
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
14.3
-
ns
t
f
Fall Time
R
D
=0.75
-
3.6
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
290
-
pF
C
oss
Output Capacitance
V
DS
=25V
-
160
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
45
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.3V
-
-
20
A
I
SM
Pulsed Source Current ( Body Diode )
1
-
-
60
A
V
SD
Forward On Voltage
2
T
j
=25
, I
S
=20A, V
GS
=0V
-
-
1.3
V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP20N03S/P
20V
100
AP20N03S/P
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Norm
alize
d
R
DS(
ON)
V
G
=10V
I
D
=10A
35
40
45
50
55
60
65
70
75
80
85
3
4
5
6
7
8
9
10
11
V
GS
(V)
R
DSON
(m



)
T
C
=25
o
C
I
D
=10A
0
10
20
30
40
50
60
70
0
1
2
3
4
5
6
7
8
9
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
C
=25
o
C
V
G
=3.0V
V
G
=4.0V
V
G
=6.0V
V
G
=8.0V
V
G
=10V
0
10
20
30
40
50
0
1
2
3
4
5
6
7
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
C
=150
o
C
V
G
=6.0V
V
G
=3.0V
V
G
=4.0V
V
G
=8.0V
V
G
=10V
0.01
0.1
1
10
100
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
(V)
I
S
(A)
T
j
= 25
o
C
T
j
= 150
o
C
0
1
2
3
-50
0
50
100
150
T
j
, Junction Temperature(
o
C)
V
GS(
t
h)
(V)
AP20N03S/P
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
0
2
4
6
8
10
12
0
2
4
6
8
10
12
Q
G
, Total Gate Charge (nC)
V
GS
, Ga
te to
So
urce Vo
lta
g
e
(
V
)
V
D
=24V
V
D
=20V
V
D
=16V
I
D
=10A
10
100
1000
1
6
11
16
21
26
31
V
DS
(V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
sponse
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
1
10
100
1
10
100
V
DS
(V)
I
D
(A)
T
c
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
DC
0.5x RATED
TO THE
OSCILLOSCOPE
-
+
10 V
D
G
S
V
DS
V
GS
R
G
R
D
0.8x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
D
G
S
V
DS
V
GS
I
D
I
G
1~ 3 mA
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