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Datasheet: AP2030SD (Advanced Power Electronics Corp.)

N and P-channel Enhancement Mode Power Mosfet

 

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Advanced Power Electronics Corp.
Advanced Power
N AND P-CHANNEL ENHANCEMENT
Electronics Corp.
MODE POWER MOSFET
Simple Drive Requirement
N-CH BV
DSS
20V
Low On-resistance
R
DS(ON)
60m
Fast Switching
I
D
2.6A
P-CH BV
DSS
-20V
R
DS(ON)
80m
Description
I
D
-2.3A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
N-channel P-channel
V
DS
Drain-Source Voltage
20
-20
V
V
GS
Gate-Source Voltage
12
12
V
I
D
@T
A
=25
Continuous Drain Current
3
2.6
-2.3
A
I
D
@T
A
=70
Continuous Drain Current
3
2.1
-1.8
A
I
DM
Pulsed Drain Current
1
15
-10
A
P
D
@T
A
=25
Total Power Dissipation
W
Linear Derating Factor
W/
T
STG
Storage Temperature Range
-55 to 150
T
J
Operating Junction Temperature Range
-55 to 150
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
62.5
/W
Data and specifications subject to change without notice
Parameter
200728042
AP2030SD
Thermal Data
2
0.016
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
G2
D2
S2
G1
D1
S1
D1
D1
D2
D2
S1
G1
S2
G2
PDIP-8
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.037
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V, I
D
=2.6A
-
-
60
m
V
GS
=2.5V, I
D
=1.8A
-
-
90
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
0.5
-
1.2
V
g
fs
Forward Transconductance
V
DS
=5V, I
D
=2.6A
-
3.6
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=20V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=16V, V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=12V
-
-
nA
Q
g
Total Gate Charge
2
I
D
=2.6A
-
9
-
nC
Q
gs
Gate-Source Charge
V
DS
=10V
-
1
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
4
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=10V
-
6.5
-
ns
t
r
Rise Time
I
D
=1A
-
14
-
ns
t
d(off)
Turn-off Delay Time
R
G
=6
,
V
GS
=4.5V
-
20
-
ns
t
f
Fall Time
R
D
=10
-
15
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
300
-
pF
C
oss
Output Capacitance
V
DS
=8V
-
255
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.2V
-
-
1.7
A
V
SD
Forward On Voltage
2
T
j
=25
, I
S
=1.7A, V
GS
=0V
-
-
1.2
V

AP2030SD
100
AP2030SD
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
-20
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
-0.037
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-4.5V, I
D
=-2.2A
-
-
80
m
V
GS
=-2.5V, I
D
=-1.8A
-
-
135
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-0.5
-
-1
V
g
fs
Forward Transconductance
V
DS
=-5V, I
D
=-2.2A
-
2.7
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-20V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=-16V, V
GS
=0V
-
-
-25
uA
I
GSS
Gate-Source Leakage
V
GS
=12V
-
-
nA
Q
g
Total Gate Charge
2
I
D
=-2.2A
-
11.5
-
nC
Q
gs
Gate-Source Charge
V
DS
=-6V
-
3.2
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
1.5
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-10V
-
-
10
ns
t
r
Rise Time
I
D
=-2.2A
-
-
25
ns
t
d(off)
Turn-off Delay Time
R
G
=6
,
V
GS
=-4.5V
-
-
50
ns
t
f
Fall Time
R
D
=4.5
-
-
30
ns
C
iss
Input Capacitance
V
GS
=0V
-
940
-
pF
C
oss
Output Capacitance
V
DS
=-15V
-
440
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=-1.2V
-
-
-1.7
A
V
SD
Forward On Voltage
2
T
j
=25
, I
S
=-1.8A, V
GS
=0V
-
-0.75
-1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on 1 in
2
copper pad of
FR4 board ; 90
/W when mounted on Min. copper pad.
100
N-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
AP2030SD
0
5
10
15
20
25
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
, D
r
a
i
n C
u
r
r
e
nt
(
A
)
T
C
=25
o
C
4.5V
4.0V
3.5V
3,0V
V
GS
=2.5V
0
5
10
15
20
25
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
I
D
, D
r
a
i
n C
u
r
r
e
nt
(
A
)
T
C
=150
o
C
4.5V
3.5V
3.0V
2.5V
V
GS
=2. 0 V
40
45
50
55
60
65
70
2
3
4
5
V
GS
(V)
R
DS
(
ON)
(m



)
I
D
=2.6A
T
C
=25
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
r
m
a
liz
e
d
R
DS
(
ON)
I
D
=2.6A
V
GS
=4.5V
AP2030SD
N-Channel
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
0
1
2
3
25
50
75
100
125
150
T
c
, Case Temperature (
o
C)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
(V)
I
D
(A
)
T
C
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
10s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
ja
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=90
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
0
0.6
1.2
1.8
2.4
0
50
100
150
T
c
,Case Temperature (
o
C)
P
D
(W
)
AP2030SD
N-Channel
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
10
100
1000
1
5
9
13
17
21
25
29
V
DS
(V)
C (p
F)
f=1.0MHz
Ciss
Coss
Crss
0
1
2
3
4
5
6
0
2
4
6
8
10
12
Q
G
, Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
r
c
e
V
o
lta
g
e
(V
)
I
D
=2.6A
V
DS
=10V
0.01
0.1
1
10
100
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
(V)
I
S
(A)
T
j
=25
o
C
T
j
=150
o
C
0
0.5
1
1.5
-50
0
50
100
150
T
j
,Junction Temperature (
o
C)
V
GS
(
t
h
)
(V)
AP2030SD
N-Channel
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0.5x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
4..5V
D
G
S
V
DS
V
GS
R
G
R
D
0.5 x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
D
G
S
V
DS
V
GS
I
D
I
G
1~ 3 mA
AP2030SD
P-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
No
rm
a
lize
d
R
DS
(ON)
V
GS
= -4.5V
I
D
=-2.2A
0
5
10
15
20
25
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=25
o
C
-4.5V
-4.0V
-3.5V
-3,0V
V
GS
= - 2.5V
0
5
10
15
20
25
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, D
r
a
i
n C
u
r
r
e
nt (
A
)
T
C
=150
o
C
-4.5V
-4.0V
-3.5V
-3,0V
V
GS
= - 2.5V
50
55
60
65
70
75
80
85
90
95
100
2
3
4
5
-V
GS
(V)
R
DS
(
ON)
(m



)
I
D
=-2.2A
T
C
=25
AP2030SD
P-Channel
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
0
1
2
3
25
50
75
100
125
150
T
c
, Case Temperature (
o
C)
-I
D
,
Dra
i
n C
u
rre
nt
(A
)
0
0.6
1.2
1.8
2.4
0
50
100
150
T
c
,Case Temperature (
o
C)
P
D
(W
)
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
(V)
-I
D
(A
)
T
C
=25
o
C
Single Pulse
1ms
10ms
100ms
1s
10s
DC
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
ja
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=90
o
C/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
P-Channel
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP2030SD
0.01
0.1
1
10
100
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-V
SD
(V)
-I
S
(A)
T
j
=25
o
C
T
j
=150
o
C
10
100
1000
10000
1
5
9
13
17
21
25
29
-V
DS
(V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
0
0.2
0.4
0.6
0.8
1
-50
0
50
100
150
T
j
,Junction Temperature (
o
C)
-V
GS
(
t
h
)
(V
)
0
1
2
3
4
5
6
0
2
4
6
8
10
12
14
Q
G
, Total Gate Charge (nC)
-V
GS
, G
a
te to S
o
u
r
ce Voltage (
V
)
I
D
=-2.2A
V
DS
=-6V
AP2030SD
P-Channel
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
0.5 x RATED V
DS
TO THE
OSCILLOSCOPE
-4.5 V
D
G
S
V
DS
V
GS
R
G
R
D
0.3 x RATED V
DS
TO THE
OSCILLOSCOPE
D
G
S
V
DS
V
GS
I
D
I
G
-1~-3mA
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