HTML datasheet archive (search documentation on electronic components) Search datasheet (1.687.043 components)
Search field

Datasheet: AP1802GU (Advanced Power Electronics Corp.)

N-channel Enhancement Mode Power Mosfet

 

Download: PDF   ZIP
Advanced Power Electronics Corp.
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Capable of 2.5V gate drive
BV
DSS
20V
Lower on-resistance
R
DS(ON)
32m
Surface mount package
I
D
5.8A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
78
/W
Data and specifications subject to change without notice
200118052
AP1802GU
Pb Free Plating Product
Parameter
Rating
Drain-Source Voltage
20
Gate-Source Voltage
▒12
Continuous Drain Current
3
, V
GS
@ 4.5V
5.8
Continuous Drain Current
3
, V
GS
@ 4.5V
4.7
Pulsed Drain Current
1,2
20
Total Power Dissipation
1.6
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.013
Thermal Data
Parameter
Storage Temperature Range
G
D
S
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The 2021-8 J-lead package provides good on-resistance performance and
space saving like SC-70-6.
2021-8
D
D
D
D
G
S
S
S
Electrical Characteristics@Tj=25oC(unless otherwise specified )
Symbol
Parameter
Test Conditions
Min . Typ . Max . Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
BV
DSS
/
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.02
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=6A
-
-
27
m
V
GS
=4.5V, I
D
=5A
-
-
32
m
V
GS
=2.5V, I
D
=3A
-
-
50
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
0.5
-
1.2
V
g
fs
Forward Transconductance
V
DS
=5V, I
D
=5A
-
13
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=20V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=16V ,V
GS
=0V
-
-
10
uA
I
GSS
Gate-Source Leakage
V
GS
=▒12V
-
-
▒100
nA
Q
g
Total Gate Charge
2
I
D
=5A
-
9
15
nC
Q
gs
Gate-Source Charge
V
DS
=16V
-
1.5
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
4
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=10V
-
9
-
ns
t
r
Rise Time
I
D
=1A
-
10
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,V
GS
=5V
-
16
-
ns
t
f
Fall Time
R
D
=10
-
5
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
620
990
pF
C
oss
Output Capacitance
V
DS
=20V
-
120
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
100
-
pF
R
g
Gate Resistance
f=1.0MHz
-
1.2
1.8
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=1.3A, V
GS
=0V
-
-
1.2
V
t
rr
Reverse Recovery Time
I
S
=5A, V
GS
=0V,
-
20
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/Ás
-
11
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board , t <5sec ; 125
/W at steady state.
AP1802GU
AP1802GU
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
4
8
12
16
20
0
1
2
3
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dra
i
n C
u
rre
nt
(
A
)
T
A
=25
o
C
V
G
= 1.5 V
5.0V
4.5V
3.5V
2.5V
0
4
8
12
16
20
0
1
2
3
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
A
= 150
o
C
5.0V
4.5V
3.5V
2.5V
V
G
= 1 .5V
25
30
35
40
45
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m



)
I
D
=3A
T
A
=25
o
C
0.6
0.9
1.2
1.5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(
ON)
I
D
= 5 A
V
G
=4.5V
0.2
0.6
1.0
1.4
1.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
V
GS(
t
h)
(V
)
0
1
2
3
4
5
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
AP1802GU
0
2
4
6
8
10
12
0
4
8
12
16
20
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
I
D
=5A
V
DS
=10V
V
DS
=12V
V
DS
=16V
10
100
1000
1
5
9
13
17
21
25
V
DS
, Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
C
iss
C
oss
C
rss
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
10
20
30
0
2
4
6
V
GS
, Gate-to-Source Voltage (V)
I
D
, Drain Current (A)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
ja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 125
/W
t
T
0.02
0.01
0.1
1
10
100
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
I
D
(A)
100us
1ms
10ms
100ms
1s
DC
T
A
=25
o
C
Single Pulse
© 2020 • ICSheet
Contact form
Main page