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Datasheet: AP1801GU (Advanced Power Electronics Corp.)

P-channel Enhancement Mode Power Mosfet

 

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Advanced Power Electronics Corp.
Advanced Power
P-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Capable of 2.5V gate drive
BV
DSS
-20V
Lower on-resistance
R
DS(ON)
70m
Surface mount package
I
D
-4A
Description
Absolute Maximum Ratings
Symbol
Unit
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=70
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
78
/W
Data and specifications subject to change without notice
AP1801GU
Parameter
Rating
Pb Free Plating Product
Drain-Source Voltage
-20
Gate-Source Voltage
▒12
Continuous Drain Current
3
-4
Continuous Drain Current
3
-3.3
Pulsed Drain Current
1,2
20
Total Power Dissipation
1.6
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.013
Storage Temperature Range
Thermal Data
Parameter
200111051
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The 2021-8 J-lead package provides good on-resistance performance
and space saving like SC-70-6.
G
D
S
2021-8
D
D
D
D
G
S
S
S
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=-250uA
-20
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=-1mA
-
0.01
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-10V, I
D
=-4.8A
-
-
52
m
V
GS
=-4.5V, I
D
=-4A
-
-
70
m
V
GS
=-2.5V, I
D
=-2A
-
-
100
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250uA
-0.5
-
-1.2
V
g
fs
Forward Transconductance
V
DS
=-5V, I
D
=-4A
-
10
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=-20V, V
GS
=0V
-
-
-1
uA
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-16V ,V
GS
=0V
-
-
-10
uA
I
GSS
Gate-Source Leakage
V
GS
=▒12V
-
-
▒100
nA
Q
g
Total Gate Charge
2
I
D
=-4A
-
11
18
nC
Q
gs
Gate-Source Charge
V
DS
=-16V
-
2
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=-4.5V
-
4
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=-10V
-
10
-
ns
t
r
Rise Time
I
D
=-1A
-
16
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=-5V
-
26
-
ns
t
f
Fall Time
R
D
=10
-
16
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
740
1180
pF
C
oss
Output Capacitance
V
DS
=-20V
-
160
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
R
g
Gate Resistance
f=1.0MHz
-
6.6
10
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
V
SD
Forward On Voltage
2
I
S
=-1.3A, V
GS
=0V
-
-
-1.2
V
t
rr
Reverse Recovery Time
I
S
=4A, V
GS
=0V,
-
29
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/Ás
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of FR4 board , t <5sec ; 125
/W at steady state.
AP1801GU
AP1801GU
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
5
10
15
20
0
1
2
3
4
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain
Cu
rre
n
t
(A)
T
A
=25
o
C
- 5.0V
- 4.5V
- 3.5V
- 2.5V
V
G
= -1.5 V
0
5
10
15
20
0
1
2
3
4
-V
DS
, Drain-to-Source Voltage (V)
-I
D
, Drain
Cu
rre
n
t
(A)
-5.0V
-4.5V
-3.5V
-2.5V
V
G
= -1.5 V
T
A
= 150
o
C
0.6
0.8
1.0
1.2
1.4
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(
ON)
I
D
= -4 A
V
G
= - 4.5V
0.0
1.0
2.0
3.0
4.0
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, Source-to-Drain Voltage (V)
-I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
0.4
0.8
1.2
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
-
V
GS(
t
h)
(V
)
40
50
60
70
80
0
2
4
6
8
10
-V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m



)
I
D
= -2 A
T
A
=25
o
C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
AP1801GU
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
0
4
8
12
0
5
10
15
20
25
Q
G
, Total Gate Charge (nC)
-V
GS
, Gate
to S
o
u
r
c
e
Voltage
(V)
I
D
=-4A
V
DS
=-16V
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-I
D
(A
)
100us
1ms
10ms
100ms
1s
DC
T
A
=25
o
C
Single Pulse
0
10
20
30
0
2
4
6
-V
GS
, Gate-to-Source Voltage (V)
-I
D
, Drain
Cu
rre
n
t
(A)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=-5V
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
o
rma
lize
d
T
h
e
r
ma
l R
e
sp
o
n
se
(R
thja
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 125
/W
t
T
0.02
100
1000
1
5
9
13
17
21
25
-V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
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