HTML datasheet archive (search documentation on electronic components) Search datasheet (1.687.043 components)
Search field

Datasheet: AP15T03H (Advanced Power Electronics Corp.)

N-channel Enhancement Mode Power Mosfet

 

Download: PDF   ZIP
Advanced Power Electronics Corp.
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Lower Gate Charge
BV
DSS
30V
Simple Drive Requirement
R
DS(ON)
80m
Fast Switching Characteristic
I
D
12A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
C
=25
A
I
D
@T
C
=100
A
I
DM
A
P
D
@T
C
=25
W
W/
T
STG
T
J
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
10
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
/W
Data & specifications subject to change without notice
200601041
Thermal Data
Parameter
Pulsed Drain Current
1
50
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.1
Storage Temperature Range
Total Power Dissipation
12.5
-55 to 150
Continuous Drain Current
12
Continuous Drain Current
6.4
Drain-Source Voltage
30
Gate-Source Voltage
▒20
AP15T03H/J
Parameter
Rating
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP15T03J) is available for low-profile applications.
G
D
S
TO-251(J)
G D
S
TO-252(H)
G
D
S
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25, I
D
=1mA
-
0.02
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=8A
-
-
80
m
V
GS
=4.5V, I
D
=5A
-
-
100
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=8A
-
7
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=24V, V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
=▒20V
-
-
▒100
nA
Q
g
Total Gate Charge
2
I
D
=8A
-
4
7
nC
Q
gs
Gate-Source Charge
V
DS
=24V
-
1.4
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
2.4
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
6
-
ns
t
r
Rise Time
I
D
=8A
-
22
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3,V
GS
=10V
-
11
-
ns
t
f
Fall Time
R
D
=1.88
-
2.4
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
280
450
pF
C
oss
Output Capacitance
V
DS
=25V
-
70
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
47
-
pF
R
g
Gate Resistance
f=1.0MHz
-
1.1
-
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=8A, V
GS
=0V
-
-
1.3
V
t
rr
Reverse Recovery Time
2
I
S
=8A,
V
GS
=0
V
,
-
17
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/Ás
-
7
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP15T03H/J
AP15T03H/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
5
10
15
20
25
30
35
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
C
= 2 5
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
0
3
6
9
12
15
18
21
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain
Cu
rre
n
t
(A)
T
C
=150
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(
ON)
I
D
=8A
V
G
=10V
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
=25
o
C
T
j
=150
o
C
40
46
52
58
64
70
76
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
DS(
ON)
(m



)
I
D
= 5 A
T
C
=25
o
C
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T
j
,Junction Temperature (
o
C)
N
o
rmalize
d
V
GS(
t
h)
(V
)
AP15T03H/J
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
2
4
6
8
10
12
14
0
2
4
6
8
10
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
V
DS
=1 6 V
V
DS
=20V
V
DS
=24V
I
D
= 8 A
10
100
1000
1
5
9
13
17
21
25
29
V
DS
,Drain-to-Source Voltage (V)
C (p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0.1
1
10
100
0.1
1
10
100
V
DS
,Drain-to-Source Voltage (V)
I
D
(A)
T
c
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
DC
© 2020 • ICSheet
Contact form
Main page