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Datasheet: AP12L02H (Advanced Power Electronics Corp.)

N-channel Enhancement Mode Power Mosfet

 

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Advanced Power Electronics Corp.
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Simple Drive Requirement
BV
DSS
25V
Low Gate Charge
R
DS(ON)
85m
Fast Switching
I
D
12A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
A
=25
A
I
D
@T
A
=100
A
I
DM
A
P
D
@T
A
=25
W
W/
T
STG
T
J
Symbol
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
6.2
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Total Power Dissipation
20
-55 to 150
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.16
Continuous Drain Current, V
GS
@ 10V
9
Pulsed Drain Current
1
22
Gate-Source Voltage
20
Continuous Drain Current, V
GS
@ 10V
12
Parameter
Rating
Drain-Source Voltage
25
200110031
AP12L02H/J
G D
S
TO-252(H)
G
D
S
TO-251(J)
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP12L02J) are available for low-profile applications.
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
25
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.024
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=6A
-
-
85
m
V
GS
=4.5V, I
D
=4A
-
-
180
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=6A
-
5.2
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=25V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=20V ,V
GS
=0V
-
-
25
uA
I
GSS
Gate-Source Leakage
V
GS
= 20V
-
-
100
nA
Q
g
Total Gate Charge
2
I
D
=6A
-
3.5
-
nC
Q
gs
Gate-Source Charge
V
DS
=20V
-
1
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=5V
-
2.3
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
4.8
-
ns
t
r
Rise Time
I
D
=6A
-
15.9
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
10.4
-
ns
t
f
Fall Time
R
D
=2.5
-
2.7
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
105
-
pF
C
oss
Output Capacitance
V
DS
=25V
-
70
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
30
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.2V
-
-
12
A
I
SM
Pulsed Source Current ( Body Diode )
1
-
-
22
A
V
SD
Forward On Voltage
2
T
j
=25
, I
S
=12A, V
GS
=0V
-
-
1.2
V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP12L02H/J
AP12L02H/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0
6
12
18
0.0
1.0
2.0
3.0
4.0
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=150
o
C
10V
8.0V
6.0V
5.0V
V
GS
=4.5V
0
7
14
21
0.0
1.0
2.0
3.0
4.0
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=25
o
C
10V
8.0V
6.0V
5.0V
V
GS
=4.5V
0.2
0.8
1.4
2
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
No
rma
l
i
z
e
d
R
DS
(
ON)
I
D
=6A
V
GS
=10V
30
80
130
180
2
6
10
14
V
GS
(V)
R
DS
(
ON)
(m



)
I
D
=6A
T
C
=25
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP12L02H/J
0.1
1
10
100
0.1
1
10
100
V
DS
(V)
I
D
(A
)
T
C
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
1s
0
4
8
12
16
25
50
75
100
125
150
T
c
, Case Temperature (
o
C)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
0
10
20
30
0
50
100
150
T
c ,
Case Temperature (
o
C)
P
D
(W
)
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
r
m
a
liz
ed
Th
er
ma
l R
e
s
p
o
n
s
e
(
R
thjc
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
AP12L02H/J
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
1
1.5
2
2.5
3
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
V
GS
(
t
h
)
(V
)
0
3
6
9
12
0
2
4
6
8
Q
G
, Total Gate Charge (nC)
V
GS
, G
a
te to S
o
u
r
ce Voltage (
V
)
I
D
=6A
V
DS
=12V
V
DS
=16V
V
DS
=20V
10
100
1000
1
8
15
22
29
V
DS
(V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
0.1
1
10
100
0
0.5
1
1.5
V
SD
(V)
I
S
(A
)
Tj=25
o
C
Tj=150
o
C
AP12L02H/J
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
5V
Q
GS
Q
GD
Q
G
Charge
0.8 x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
D
G
S
V
DS
V
GS
I
D
I
G
1~ 3 mA
0.6 x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
10 V
D
G
S
V
DS
V
GS
R
G
R
D
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