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Datasheet: AP09N90W (Advanced Power Electronics Corp.)

N-channel Enhancement Mode

 

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Advanced Power Electronics Corp.
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Repetitive Avalanche Rated
BV
DSS
900V
Fast Switching
R
DS(ON)
1.2
Simple Drive Requirement
I
D
8.6A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
Drain-Source Voltage
V
V
GS
Gate-Source Voltage
V
I
D
@T
C
=25
Continuous Drain Current, V
GS
@ 10V
A
I
D
@T
C
=100
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25
Total Power Dissipation
W
W/
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
T
STG
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
0.52
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
40
/W
Data & specifications subject to change without notice
Storage Temperature Range
-55 to 150
-55 to 150
Parameter
200714032
AP09N90W
8.6
30
240
Parameter
Rating
900
5.2
8.6
5
92
Linear Derating Factor
1.92
30
G
D
S
G
D
S
TO-3P
AP09N90 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications. TO- 3P type
provide high blocking voltage to overcome voltage surge and sag in the
toughest power system with the best combination of fast switching,
ruggedized design and cost-effectiveness.
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=1mA
900
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.67
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=4.5A
-
-
1.2
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
2
-
4
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=4.5A
-
11.5
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=900V, V
GS
=0V
-
-
10
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=720V
,
V
GS
=0V
-
-
100
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
3
I
D
=8.6A
-
67.1
120
nC
Q
gs
Gate-Source Charge
V
DS
=540V
-
17
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=10V
-
19.9
-
nC
t
d(on)
Turn-on Delay Time
3
V
DD
=450V
-
25.8
-
ns
t
r
Rise Time
I
D
=5A
-
10.3
-
ns
t
d(off)
Turn-off Delay Time
R
G
=10
,
V
GS
=10V
-
305.2
-
ns
t
f
Fall Time
R
D
=90
-
536
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
4087 6000
pF
C
oss
Output Capacitance
V
DS
=25V
-
221
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
51
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.5V
-
8.6
A
I
SM
Pulsed Source Current ( Body Diode )
1
-
-
30
A
V
SD
Forward On Voltage
3
T
j
=25
, I
S
=8.6A, V
GS
=0V
-
-
1.5
V
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
j
=25
o
C , V
DD
=50V , L=6.8mH , R
G
=25
, I
AS
=5.2A.
3.Pulse width <300us , duty cycle <2%.


AP09N90W
30V
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BV
DSS
v.s. Junction
Fig 4. Normalized On-Resistance
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP09N90W
0.7
0.9
1.1
1.3
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Norm
alize
d
B
V
DSS
(V)
0
1
2
3
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
Norm
alize
d
R
DS(
ON)
V
GS
=10V
I
D
=4.5A
0
2
4
6
8
10
0
12
24
36
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
C
=150
o
C
10V
5.0V
4.5V
V
GS
= 4.0 V
0
7
14
21
0
10
20
30
40
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
C
=25
o
C
10V
5.5V
5.0V
V
GS
=10V
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
= 150
o
C
T
j
= 25
o
C
1
2
3
4
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
V
GS(
t
h)
(V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP09N90W
0.1
1
10
100
1
10
100
1000
10000
V
DS
, Drain-to-Source Voltage (V)
I
D
(A)
T
C
=25
o
C
Single Pulse
10us
100us
1ms
10ms
DC
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
jc
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
0
2
4
6
8
10
12
14
0
10
20
30
40
50
60
70
80
90
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
I
D
=8.6A
V
DS
=180V
V
DS
=360V
V
DS
=540V
1
100
10000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
10V
Q
GS
Q
GD
Q
G
Charge
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