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Datasheet: AP09N90CW (Advanced Power Electronics Corp.)

N-channel Enhancement Mode

 

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Advanced Power Electronics Corp.
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Minimize On-resistance
BV
DSS
900V
Fast Switching
R
DS(ON)
1.4
Simple Drive Requirement
I
D
7.6A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
Drain-Source Voltage
V
V
GS
Gate-Source Voltage
V
I
D
@T
C
=25
Continuous Drain Current, V
GS
@ 10V
A
I
D
@T
C
=100
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25
Total Power Dissipation
W
W/
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current
A
T
STG
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
0.60
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
40
/W
Data & specifications subject to change without notice
6
4.8
120
Linear Derating Factor
1.6
Parameter
Rating
900
200731031
AP09N90CW
7.6
25
208
Storage Temperature Range
-55 to 150
-55 to 150
Parameter
30
G
D
S
G
D
S
TO-3P
AP09N90C provides minimize on-state resistance , superior switching
performance and high efficiency switching power supply applications.
TO-3P package is preferred for commercial-industrial applications and
provides greater distance between pins to meet the requirements of most
safety specifications.
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=1mA
900
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.74
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=3.6A
-
1.25
1.4
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
2
-
4
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=3.6A
-
3.6
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=900V, V
GS
=0V
-
-
10
uA
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=720V
,
V
GS
=0V
-
-
100
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
3
I
D
=7.2A
-
50.7
80
nC
Q
gs
Gate-Source Charge
V
DS
=540V
-
12
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=10V
-
16
-
nC
t
d(on)
Turn-on Delay Time
3
V
DD
=450V
-
20
-
ns
t
r
Rise Time
I
D
=7.2A
-
16
-
ns
t
d(off)
Turn-off Delay Time
R
G
=6.8
,
V
GS
=10V
-
65
-
ns
t
f
Fall Time
R
D
=62.5
-
27
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
3097
5000
pF
C
oss
Output Capacitance
V
DS
=15V
-
516
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
19
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
V
SD
Forward On Voltage
3
I
S
=7.2A, V
GS
=0V
-
-
1.5
A
trr
Reverse Recovery Time
I
S
=7.2A, V
GS
=0V,
-
673
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/Ás
-
9.6
-
ÁC
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
j
=25
o
C , V
DD
=50V , L=6.8mH , R
G
=25
, I
AS
=6A.
3.Pulse width <300us , duty cycle <2%.


AP09N90CW
30V
100
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BV
DSS
v.s. Junction
Fig 4. Normalized On-Resistance
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
AP09N90CW
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
= 150
o
C
T
j
= 25
o
C
1
2
3
4
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
V
GS(
t
h)
(V)
0
1
2
3
4
5
0
2
4
6
8
10
12
14
16
18
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
C
=150
o
C
V
G
=4.0V
10V
7.0V
5.0V
4.5V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
Norm
alize
d
R
DS(
ON)
V
G
=10V
I
D
=3.6A
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
Junction Temperature (
o
C)
Norm
alize
d
B
V
DSS
(V)
0
2
4
6
8
10
0
2
4
6
8
10
12
14
16
18
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
V
G
=4.0V
4.5V
10V
7.0V
5.0V
T
C
=25
o
C
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
AP09N90CW
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
10V
Q
GS
Q
GD
Q
G
Charge
0
3
6
9
12
15
0
20
40
60
80
Q
G
, Total Gate Charge (nC)
V
GS
, Gate
to S
o
u
r
c
e
V
oltage
(
V
)
V
DS
=180V
V
DS
=360V
V
DS
=540V
I
D
=7.2A
10
100
1000
10000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (p
F
)
f=1.0MHz
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.1
1
10
100
1000
10000
V
DS
, Drain-to-Source Voltage (V)
I
D
(A)
T
c
=25
o
C
Single Pulse
DC
1s
100ms
10ms
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Norm
alize
d
Th
e
r
m
al R
e
spon
se
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
DUTY=0.5
Single Pulse
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