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Datasheet: AP09N70I-A (Advanced Power Electronics Corp.)

N-channel Enhancement Mode Power Mosfet

 

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Advanced Power Electronics Corp.
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Dynamic dv/dt Rating
BV
DSS
650V
Repetitive Avalanche Rated
R
DS(ON)
0.75
Fast Switching
I
D
9A
Simple Drive Requirement
RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
Drain-Source Voltage
V
V
GS
Gate-Source Voltage
V
I
D
@T
C
=25
Continuous Drain Current, V
GS
@ 10V
A
I
D
@T
C
=100
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25
Total Power Dissipation
W
W/
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
T
STG
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
3
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
65
/W
Data & specifications subject to change without notice
Parameter
Storage Temperature Range
AP09N70I-A
-55 to 150
9
40
42
30
Pb Free Plating Product
9
5
305
Rating
650
200711051-1/4
Linear Derating Factor
0.34
9
-55 to 150
Parameter
G
D
S
G D
S
TO-220CFM(I)
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is universally preferred for all
commercial-industrial through hole applications.
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=1mA
650
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.6
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=4.5A
-
-
0.75
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
2
-
4
V
g
fs
Forward Transconductance
V
DS
=50V, I
D
=4.5A
-
4.5
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=600V, V
GS
=0V
-
-
10
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=480V
,
V
GS
=0V
-
-
100
uA
I
GSS
Gate-Source Leakage
V
GS
=30V
-
-
100
nA
Q
g
Total Gate Charge
3
I
D
=9A
-
44
-
nC
Q
gs
Gate-Source Charge
V
DS
=480V
-
11
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=10V
-
12
-
nC
t
d(on)
Turn-on Delay Time
3
V
DD
=300V
-
19
-
ns
t
r
Rise Time
I
D
=9A
-
21
-
ns
t
d(off)
Turn-off Delay Time
R
G
=10
,
V
GS
=10V
-
56
-
ns
t
f
Fall Time
R
D
=34
-
24
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
2660
-
pF
C
oss
Output Capacitance
V
DS
=25V
-
170
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
10
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.5V
-
-
9
A
I
SM
Pulsed Source Current ( Body Diode )
1
-
-
40
A
V
SD
Forward On Voltage
3
T
j
=25
, I
S
=9A, V
GS
=0V
-
-
1.5
V
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
j
=25
o
C , V
DD
=50V , L=6.8mH , R
G
=25
, I
AS
=9A.
3.Pulse width <300us , duty cycle <2%.
AP09N70I-A
2/4
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BV
DSS
v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
AP09N70I-A
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
BV
DSS
(V
)
0
1
2
3
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
N
o
rmalize
d
R
DS(ON)
I
D
=4.5A
V
G
=10V
0
2
4
6
8
10
0
4
8
12
16
20
24
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
C
=150
o
C
4.0V
V
G
=3.5V
10V
6.0V
5.0V
4.5V
0
2
4
6
8
10
0
3
6
9
12
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
C
=25
o
C
10V
6.0V
5.0V
4.5V
4.0V
V
G
=3.5V
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, Source-to-Drain Voltage (V)
I
S
(A
)
T
j
= 150
o
C
T
j
= 25
o
C
1
2
3
4
5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
V
GS(t
h)
(V
)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
AP09N70I-A
0.1
1
10
100
1
10
100
1000
10000
V
DS
, Drain-to-Source Voltage (V)
I
D
(A
)
T
c
=25
o
C
Single Pulse
10us
100us
1ms
10ms
100ms
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
4
8
12
16
0
20
40
60
Q
G
, Total Gate Charge (nC)
V
GS
,
G
a
te
to S
o
u
r
c
e
Voltage
(
V
)
I
D
=9A
V
DS
=320V
V
DS
=400V
V
DS
=480V
1
100
10000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
10V
Q
GS
Q
GD
Q
G
Charge
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