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Datasheet: AP0603GMA (Advanced Power Electronics Corp.)

N-channel Enhancement Mode Power Mosfet

 

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Advanced Power Electronics Corp.
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
SO-8 similar area footprint and pin assignment
BV
DSS
30V
Low Gate Charge
R
DS(ON)
6m
Fast Switching Speed
I
D
75A
RoHS Compliant
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
V
V
GS
V
I
D
@T
C
=25
A
I
D
@T
C
=100
A
I
DM
A
P
D
@T
C
=25
W
W/
E
AS
Single Pulse Avalanche Energy
4
mJ
I
AR
Avalanche Current
A
T
STG
T
J
Symbol
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
85
/W
Data & specifications subject to change without notice
AP0603GMA
Rating
Pb Free Plating Product
Continuous Drain Current, V
GS
@ 10V
62.5
-55 to 150
55
300
29
24
Parameter
Drain-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Gate-Source Voltage
Parameter
Operating Junction Temperature Range
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Thermal Data
30
0.5
-55 to 150
200401053-1/4
▒20
75
The APAK-5 package is preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
G
D
S
S
S
S G
D
APAK-5
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
30
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.018
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=45A
-
-
6
m
V
GS
=4.5V, I
D
=30A
-
-
10
m
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
1
-
3
V
g
fs
Forward Transconductance
V
DS
=10V, I
D
=30A
-
32
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=30V, V
GS
=0V
-
-
1
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=24V, V
GS
=0V
-
-
500
uA
I
GSS
Gate-Source Leakage
V
GS
=▒20V
-
-
▒100
nA
Q
g
Total Gate Charge
2
I
D
=30A
-
33
52
nC
Q
gs
Gate-Source Charge
V
DS
=24V
-
7.5
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=4.5V
-
24
-
nC
t
d(on)
Turn-on Delay Time
2
V
DS
=15V
-
11.2
-
ns
t
r
Rise Time
I
D
=30A
-
77
-
ns
t
d(off)
Turn-off Delay Time
R
G
=3.3
,
V
GS
=10V
-
35
-
ns
t
f
Fall Time
R
D
=0.5
-
67
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
2700 4200
pF
C
oss
Output Capacitance
V
DS
=25V
-
550
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
380
-
pF
R
g
Gate Resistance
f=1.0MHz
-
1.9
2.8
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
V
SD
Forward On Voltage
2
I
S
=45A, V
GS
=0V
-
-
1.3
V
t
rr
Reverse Recovery Time
2
I
S
=30A,
V
GS
=0
V
,
-
28
-
ns
Q
rr
Reverse Recovery Charge
dI/dt=100A/Ás
-
10
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board.
4.Starting T
j
=25
o
C , V
DD
=25V , L=0.1mH , R
G
=25
AP0603GMA
2/4
AP0603GMA
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3/4
0.3
0.6
0.9
1.2
1.5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
V
GS(t
h)
(V
)
0
30
60
90
120
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
C
=25
o
C
V
G
=3.0V
10V
7.0V
5.0V
4.5V
0
30
60
90
120
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
V
G
= 3.0 V
10V
7.0V
5 .0V
4.5V
T
C
= 15 0
o
C
0.5
0.9
1.3
1.7
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
o
rmalize
d
R
DS(ON)
I
D
=45A
V
G
=10V
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
Is (
A
)
T
j
=25
o
C
T
j
=150
o
C
4
6
8
10
12
14
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
DS(ON)
(m
)
I
D
= 30 A
T
c
=25
AP0603GMA
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
100
1000
10000
1
6
11
16
21
26
31
V
DS
,Drain-to-Source Voltage (V)
C (
p
F)
f=1.0MHz
C
iss
C
oss
C
rss
0
4
8
12
16
0
20
40
60
80
Q
G
, Total Gate Charge (nC)
V
GS
,
G
a
te
to S
o
u
r
c
e
Voltage
(
V
)
V
DS
=15V
V
DS
=20V
V
DS
=24V
I
D
=30A
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
r
mal Re
spon
se
(
R
th
jc
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1
1
10
100
V
DS
,Drain-to-Source Voltage (V)
I
D
(A
)
T
c
=25
o
C
Single Pulse
1ms
10ms
100ms
DC
0
30
60
90
120
0
2
4
6
8
V
GS
, Gate-to-Source Voltage (V)
I
D
, Dr
a
i
n C
u
r
r
e
nt
(A
)
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
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