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Datasheet: AP02N60I (Advanced Power Electronics Corp.)

N-channel Enhancement Mode

 

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Advanced Power Electronics Corp.
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
Repetitive Avalanche Rated
BV
DSS
600V
Fast Switching
R
DS(ON)
8
Simple Drive Requirement
I
D
2A
Description
Absolute Maximum Ratings
Symbol
Units
V
DS
Drain-Source Voltage
V
V
GS
Gate-Source Voltage
V
I
D
@T
C
=25
Continuous Drain Current, V
GS
@ 10V
A
I
D
@T
C
=100
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
1
A
P
D
@T
C
=25
Total Power Dissipation
W
W/
E
AS
Single Pulse Avalanche Energy
2
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
T
STG
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
5.7
/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
/W
Data & specifications subject to change without notice
200117032
AP02N60I
80
-55 to 150
Parameter
2
2
1.26
Parameter
Rating
600
Storage Temperature Range
-55 to 150
3.6
22
Linear Derating Factor
0.176
2
30
G
D
S
TO-220CFM(I)
The TO-220CFM package is universally preferred for all commercial-
industrial applications. The device is suited for switch mode power
supplies ,AC-DC converters and high current high speed switching
circuits.
G
D
S
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=1mA
600
-
-
V
B
V
DSS
/T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
, I
D
=1mA
-
0.6
-
V/
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=1A
-
-
8
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
2
-
4
V
g
fs
Forward Transconductance
V
DS
=20V, I
D
=1A
-
0.2
-
S
I
DSS
Drain-Source Leakage Current (T
j
=25
o
C)
V
DS
=600V, V
GS
=0V
-
-
10
uA
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=480V
,
V
GS
=0V
-
-
100
uA
I
GSS
Gate-Source Leakage
V
GS
=
-
-
nA
Q
g
Total Gate Charge
3
I
D
=2A
-
14
-
nC
Q
gs
Gate-Source Charge
V
DS
=480V
-
2
-
nC
Q
gd
Gate-Drain ("Miller") Charge
V
GS
=10V
-
8.5
-
nC
t
d(on)
Turn-on Delay Time
3
V
DS
=300V
-
9.5
-
ns
t
r
Rise Time
I
D
=2A
-
12
-
ns
t
d(off)
Turn-off Delay Time
R
G
=10
,
V
GS
=10V
-
21
-
ns
t
f
Fall Time
R
D
=150
-
9
-
ns
C
iss
Input Capacitance
V
GS
=0V
-
155
-
pF
C
oss
Output Capacitance
V
DS
=25V
-
27
-
pF
C
rss
Reverse Transfer Capacitance
f=1.0MHz
-
14
-
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
I
S
Continuous Source Current ( Body Diode )
V
D
=V
G
=0V , V
S
=1.5V
-
-
2
A
I
SM
Pulsed Source Current ( Body Diode )
1
-
-
3.6
A
V
SD
Forward On Voltage
3
T
j
=25
, I
S
=2A, V
GS
=0V
-
-
1.5
V
Notes:
1.Pulse width limited by safe operating area.
2.Starting T
j
=25
o
C , V
DD
=50V , L=40mH , R
G
=25
, I
AS
=2A.
3.Pulse width <300us , duty cycle <2%.
AP02N60I
30V
100
AP02N60I
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BV
DSS
v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
No
rma
l
i
z
e
d
B
V
DS
S
(V
)
0
0.4
0.8
1.2
1.6
2
2.4
2.8
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
No
rma
l
i
z
e
d
R
DS
(
ON)
V
GS
=10V
I
D
=1A
0
0.5
1
1.5
0
5
10
15
20
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=25
o
C
10V
5.5V
6.0V
5.0V
V
GS
=4.5V
0
0.2
0.4
0.6
0.8
0
5
10
15
20
V
DS
, Drain-to-Source Voltage (V)
I
D
,
Dra
i
n C
u
rre
nt
(A
)
T
C
=150
o
C
10V
5.5V
6.0V
5.0V
V
GS
=4.5V
AP02N60I
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
0
10
20
30
0
50
100
150
Tc, Case Temperature (
o
C )
P
D
(W
)
0
0.4
0.8
1.2
1.6
2
2.4
25
50
75
100
125
150
T
c
, Case Temperature (
o
C )
I
D
,
Dra
i
n C
u
rre
nt
(A
)
0.01
0.1
1
10
1
10
100
1000
10000
V
DS
(V)
I
D
(A
)
T
C
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
r
m
aliz
ed T
h
er
m
a
l Res
pon
s
e
(
R
th
jc
)
P
DM
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty Factor = 0.5
Single Pulse
AP02N60I
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
Fig 11. Forward Characteristic of
Fig 12. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
0
1
2
3
4
5
-50
0
50
100
150
T
j
, Junction Temperature (
o
C )
V
GS
(
t
h
)
(V
)
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
SD
(V)
I
S
(A
)
T
j
= 150
o
C
T
j
= 25
o
C
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
18
20
Q
G
, Total Gate Charge (nC)
V
GS
, G
a
te to S
o
u
r
ce Voltage (
V
)
I
D
=2A
V
DS
=320V
V
DS
=400V
V
DS
=480V
10
100
1000
1
5
9
13
17
21
25
29
V
DS
(V)
C (
p
F)
f=1.0MHz
Ciss
Coss
Crss
AP02N60I
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
t
d(on)
t
r
t
d(off)
t
f
V
DS
V
GS
10%
90%
Q
V
G
10V
Q
GS
Q
GD
Q
G
Charge
0.5x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
10 V
D
G
S
V
DS
V
GS
R
G
R
D
0.8 x RATED V
DS
TO THE
OSCILLOSCOPE
-
+
D
G
S
V
DS
V
GS
I
D
I
G
1~ 3 mA
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